Ti and NiPt/Ti liner silicide contacts for advanced technologies

Adusumilli, Praneet; Alptekin, Emre; Raymond, M.; Breil, N.; Chafik, F.; Lavoie, C.; Ferrer, Domingo; Jain, S.; Kamineni, V.; Özcan, Ahmet; Allen, S.; An, Jun-Peng; Basker, Veeraraghavan; Bolam, R.; Bu, H.; Cai, Jin; Demarest, J.; Doris, B.; Engbrecht, E. R.; Fan, S.; Fronheiser, Jody; Gaidai, Oleg; Guo, Dechao; Haran, B.; Hilscher, David F.; Jagannathan, H.; Kang, Dong Hun; Ke, Yiqing; Kim, J.; Koswatta, Siyuranga O.; Kumar, Aditya; Labonte, Andre; Lallement, Romain; Lee, W.; Lee, Y.; Li, J.; Chen, Lin; Liu, B.; Liu, Z.; Loubet, N.; Makela, Neal; Mochizuki, Seibu; Morgenfeld, Bradley; Narasimha, S.; Nesheiwat, Tayel; Niimi, Hiroaki; Niu, C.; Oh, M.; Park, C.; Ramachandran, R.; Rice, Jeremy Elliott; Sardesai, V.; Shearer, Jeffrey C.; Sheraw, C.; Tran, Chi Thanh; Tsutsui, Gen; Utomo, H.; Wong, Keith H.K.; Xie, Ruilong; Yamashita, T.; Yan, Yingjie; Yeh, Chun-Chen; Yu, Meiqi; Zamdmer, N.; Zhan, Ning; Zhang, B.; Paruchuri, Vamsi; Goldberg, C.; Kleemeier, W.; Stiffler, S. R.; Divakaruni, R.; Henson, W.K.

doi:10.1109/vlsit.2016.7573382

Cited by 19 publications

(3 citation statements)

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“…The evolution of silicides has followed the route of TiSi 2 → CoSi 2 → Ni(Pt)Si in conventional planar devices [1]. More recently, the advent of 3D FinFETs has brought about a widespread return to Ti-based ohmic contacts using TiSi x or TiSi x Ge y , instead of traditional TiSi 2 [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19]. The reason for this continuous innovation using silicides as source/drain (S/D) contact materials is closely related to Moore's law.…”

Section: Introductionmentioning

confidence: 99%

Titanium-based ohmic contacts in advanced CMOS technology

Mao¹,

Luo²

2019

J. Phys. D: Appl. Phys.

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Since the contact resistance characterized by a specific contact resistivity (ρ c ) in the source/ drain (S/D) regions is becoming a bottleneck for further improving device performance, the criteria for selecting S/D contact materials, e.g. silicides, is therefore more concerned with the ρ c in state-of-the-art fin channel field-effect-transistors rather than the sheet resistance (R sh ) of silicides in conventional planar devices. In these circumstances, Ti-based ohmic contacts prevail over Ni(Pt)Si-based ones, and they serve as the standard S/D contacts in advanced complementary metal-oxide-semiconductor technology. In this article, an overview of recent innovations in Ti-based ohmic contacts, including (1) extraction of ultra-low ρ c in the sub-10 −8 Ω cm 2 regime, (2) fundamental aspects of the Ti/Si solid-state reaction, (3) the impact of Ge pre-amorphization implantation (Ge PAI) on both the formation of TiSi x /TiSi x Ge y and ρ c in the low temperature regime (⩽600 °C), (4) dopant boosting to reduce ρ c , (5) conformal Ti deposition for surrounding contacts and (6) dual silicides and metal-insulator-semiconductor contacts, are presented.

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Section: Introductionmentioning

confidence: 99%

Titanium-based ohmic contacts in advanced CMOS technology

Mao¹,

Luo²

2019

J. Phys. D: Appl. Phys.

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“…14 Adding ∼5% Pt to Ni film will not affect the formation of low-resistivity phase Ni-based germanosilicide, but will improve its thermal stability. 15,16…”

Section: Methodsmentioning

confidence: 99%

Si_0.5Ge_0.5 Channel FinFET Preparation on an In Situ Doped SiGe SRB and Its Electrical Characteristics Optimization

Chen

Li²,

Jia³

et al. 2023

ECS J. Solid State Sci. Technol.

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The Si0.5Ge0.5 channel FinFET preparation on an in-situ-doped SiGe strain relaxed buffer (SRB) and its electrical characteristic optimization were explored in detail. First, an in-situ phosphorus-doped three-layer SiGe SRB was developed and a perfect Si0.5Ge0.5/Si0.7Ge0.3 SRB fin profile was achieved under the conventional STI last scheme. Then, the Si0.5Ge0.5 channel FinFET was successfully prepared according to the standard integration process of Si channel FinFET. However, it suffers bad electrical performance due to poor Si0.5Ge0.5 channel interfacial property and high S/D series resistance. Therefore, a channel passivation process including an in-situ ozone oxidation combined with HfO2/Al2O3 bi-layer gate dielectric, and a S/D silicide process are simultaneously introduced to optimize its electrical characteristics. As a result, its SS can be decreased from 174 to 104 mV/dec, and its driven current under |VGS| = |VDS| = 0.8 V can be increased from 12 to 314 μA/μm. Therefore, these newly developed technologies are practical for the Si0.5Ge0.5 channel FinFET.

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“…For 7 nm technology node and beyond, the source/drain contact resistance (R c ) has been a main performance killer for three-dimensional (3D) devices such as FinFETs and stacked nanosheets gate-all-around transistors [1]. Particularly, it is the specific contact resistivity (ρ c ) rather than the sheet resistivity (ρ sheet ) of silicide that dominates R c in the mainstream liner silicide contact structures [2,3]. Since ρ c increases exponentially with the electron Schottky barrier (Φ Bn ), silicide with low Φ Bn is urgently required for ρ c reduction [4].…”

Section: Introductionmentioning

confidence: 99%

Ultra-thin and conformal epitaxial NiSi₂ film on Si fins by barrier-induced phase modulation (BPM) technique

Yang

Xuan

et al. 2020

Semicond. Sci. Technol.

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In this work, a barrier-induced phase modulation scheme to realize an ultra-thin and conformal epitaxial NiSi 2 film for wrapped-around contact beyond the 7 nm technology node, is proposed and experimentally demonstrated. The 1 nm thick Al 2 O 3 barrier inserted between the Ni film and the substrate can limit the amount of nickel diffusing into silicon and establish an initial Si-rich region consisted of only a few atomic layers during a rapid thermal annealing treatment, so that NiSi 2 can grow epitaxially as the first phase at a temperature as low as 600 °C. Additionally, thanks to the barrier layer, a relatively thick (50 nm) Ni film can be used, which not only ensures the continuity of NiSi 2 formed on sidewalls of three-dimensional structures, but also reduces the process complexity. As a result, a conformal 3.3 nm NiSi 2 shell with Φ Bn =0.33 eV is successfully obtained on Si fins.

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Ti and NiPt/Ti liner silicide contacts for advanced technologies

Cited by 19 publications

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Titanium-based ohmic contacts in advanced CMOS technology

Titanium-based ohmic contacts in advanced CMOS technology

Si_0.5Ge_0.5 Channel FinFET Preparation on an In Situ Doped SiGe SRB and Its Electrical Characteristics Optimization

Ultra-thin and conformal epitaxial NiSi₂ film on Si fins by barrier-induced phase modulation (BPM) technique

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Ti and NiPt/Ti liner silicide contacts for advanced technologies

Cited by 19 publications

References 0 publications

Titanium-based ohmic contacts in advanced CMOS technology

Titanium-based ohmic contacts in advanced CMOS technology

Si0.5Ge0.5 Channel FinFET Preparation on an In Situ Doped SiGe SRB and Its Electrical Characteristics Optimization

Ultra-thin and conformal epitaxial NiSi2 film on Si fins by barrier-induced phase modulation (BPM) technique

Contact Info

Product

Resources

About

Si_0.5Ge_0.5 Channel FinFET Preparation on an In Situ Doped SiGe SRB and Its Electrical Characteristics Optimization

Ultra-thin and conformal epitaxial NiSi₂ film on Si fins by barrier-induced phase modulation (BPM) technique