2012
DOI: 10.1007/s12598-012-0488-5
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Ti-Si-N films prepared by magnetron sputtering

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Cited by 6 publications
(4 citation statements)
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“…Each such spike will behave as a small second-phase particle in an otherwise damaged matrix and interact with dislocations. The real scenario may be a mixture of both mechanism [38,39,[42][43][44][45].…”
Section: Ion Implantation Led To Decrease In Ti Concentration and Locmentioning
confidence: 99%
“…Each such spike will behave as a small second-phase particle in an otherwise damaged matrix and interact with dislocations. The real scenario may be a mixture of both mechanism [38,39,[42][43][44][45].…”
Section: Ion Implantation Led To Decrease In Ti Concentration and Locmentioning
confidence: 99%
“…These results above show that the increase in N 2 flow rate is beneficial for the grain refinement of TiN in the nanocomposite film. This may be because increasing N 2 flow rate can result in more a-Si 3 N 4 formed [9], inhibiting the growth of TiN grains [5].…”
Section: Resultsmentioning
confidence: 99%
“…This is associated with the finer and smoother structure of the nanocomposite film produced at 15 sccm as shown in Fig.2b and Fig.3a. The excellent adhesion strength of such film may play a positive role in the cutting performance [9]. The film produced at N 2 flow rate of 20 sccm has the lowest adhesion strength, perhaps resulting from its most amorphous Si 3 N 4 and highest brittleness [7,9].…”
Section: Resultsmentioning
confidence: 99%
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