Tight-binding model for the transverse Shubnikov–de Haas effect in semiconductor superlattices

Abstract

The oscillatory part of the conductivity along the con6ning planes of a superlattice miniband under a perpendicular quantizing magnetic 6eld was calculated, assuming a tight-binding approximation for the miniband dispersion. The manifestation of the belly and neck cross sections of the Fermi surface is studied as a function of the broadening of the electronic energy levels, miniband widths, and energy minigaps. The efFects of the deviation from the nearest-neighbor tight-binding approximation upon the line shape of the magnetoresistance are studied. The model presented allows for a quantitative description of the magnetoresistance spectra and is in good agreement with recent experimental observations on InAsi, Sb /InSb doped superlattices and GaAs with a periodical planar doping of silicon.

Measurement of miniband parameters of a doped superlattice by photoluminescence in high magnetic fields

“…where d is the period of the superlattice, and by following the steps described in 13 , from equations (3,4) we can obtain an analytical expression for the PL intensity oscillations:…”

Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si -doped GaAs/In0.15Ga0.85As quantum wells

“…As described in an earlier paper [10], in order to determine the electronic density and the quantum mobility of the occupied subbands, our magnetoresistance traces (R xx ) were numerically differentiated, expressed as a function of the reciprocal magnetic field (1/B), and multiplied by a smooth window function (the Hanning function) before computing their fast Fourier transform (FFT). The quantum mobility of a specific subband was determined by the logarithmic dependence of the maximum amplitude of the FFT peak plotted against 1/B [11,12]. In these conditions, the slope of the straight line through the data is equal to π/µ i (i = 1, 2, 3 .…”

Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si δ-dopedGaAs/In0.15Cavalheiro1, Silva2, Takahashi3 et al. 2002Phys. Rev. B11010View full textAdd to dashboardCite

“…As described in an earlier paper [10], in order to determine the electronic density and the quantum mobility of the occupied subbands, our magnetoresistance traces (R xx ) were numerically differentiated, expressed as a function of the reciprocal magnetic field (1/B), and multiplied by a smooth window function (the Hanning function) before computing their fast Fourier transform (FFT). The quantum mobility of a specific subband was determined by the logarithmic dependence of the maximum amplitude of the FFT peak plotted against 1/B [11,12]. In these conditions, the slope of the straight line through the data is equal to π/µ i (i = 1, 2, 3 .…”