Time Dependent, Dielectric Breakdown Characteristics of Ta2 O 5 / SiO2 Double Layers

Nishioka, Yasushiro; Shinriki, Hiroshi; Mukai, K.

doi:10.1149/1.2096760

J. Electrochem. Soc.

1989

DOI: 10.1149/1.2096760

|View full text |Cite

Time Dependent, Dielectric Breakdown Characteristics of Ta2 O 5 / SiO2 Double Layers

Yasushiro Nishioka

Hiroshi Shinriki

K. Mukai

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

1992

1999

Publication Types

Select...

Article4

Relationship

Self Cite0

Independent4

Authors

Journals

Cited by 4 publications

(1 citation statement)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…= 546.1 nm (12)), and high ionic conductivity, respectively. The Ta205 films for such applications have been prepared by thermal oxidation (13)(14)(15), anodic oxidation (16)(17)(18), reactive sputtering (19,20), ion plating (21), or chemical vapor deposition (1,5,8,(22)(23)(24)(25)(26). Among these methods, metalorganic chemical vapor deposition (MOCVD) using thermal decomposition reactions of tantalum alkoxides has the following advantages: lower processing temperature, good uniformity of films, low defect density of films, good step-coverage, and facilities for the formation of multiple layer or composite oxide films.…”

mentioning

confidence: 99%

Ellipsometric Examination of Growth and Dissolution Rates of Ta2 O 5 Films Formed by Metalorganic Chemical Vapor Deposition

Sugimoto

1992

J. Electrochem. Soc.

View full text Add to dashboard Cite

The formation process of Ta2O5 films in MOCVD using pentamethoxy tantalum (PMT) as a metal organic source and O2 as reactant gas has been analyzed by in situ ellipsometry at deposition temperatures of 473–773 K. According to the change in the growth rate of the films, the formation process can be divided into three stages, the initial, the transition, and the final stages. The growth rate and the optical constant of the films were found to depend on the deposition temperature and the deposition time. All the films obtained at temperatures of 473–773 K had amorphous structures. The corrosion resistance of the films against a buffered HF solution depended on the deposition temperature. By annealing at 923 K in the air for 3.6 ks, amorphous Ta2O5 films deposited at temperatures higher than 673 K were transformed into polycrystalline structures. Ta2O5 films crystallized by annealing showed extremely high corrosion resistances.

show abstract

mentioning

confidence: 99%

Ellipsometric Examination of Growth and Dissolution Rates of Ta2 O 5 Films Formed by Metalorganic Chemical Vapor Deposition

Sugimoto

1992

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

Chemical Vapor Deposition of Tantalum Oxide from Tetraethoxo(β-diketonato)tantalum(V) Complexes

Pollard

Puddephatt

1999

Chem. Mater.

View full text Add to dashboard Cite

The complexes [Ta(OEt) 4 (β-diketonate)] (β-diketonate ) acetylacetonate, 2; hexafluoroacetylacetonate , 3; 1,1,1-trifluoroacetylacetonate, 4; dipivaloylmethanate, 5; 2,2-dimethyl-6,6,7,7,8,8,8-heptafluoro-3,5-octanedionate, 6) are established as volatile liquid precursors for low-pressure chemical vapor deposition (CVD) of films of tantalum(V) oxide. They give thermal CVD at a slightly lower temperature than the commonly used precursor [{Ta-(OEt) 5 } 2 ], 1. In all cases, the CVD at 300-450 °C gives amorphous films of Ta 2 O 5 , which crystallize on annealing at 800 °C under oxygen. Promotion of Ta 2 O 5 film formation is established using catalyst-enhanced CVD with a palladium precursor as "catalyst" and the minimum CVD temperature is then reduced to 200 °C.

show abstract

Electrical characteristics of ferroelectric PZT thin films for DRAM applications

Moazzami

Shepherd

1992

IEEE Trans. Electron Devices

268

View full text Add to dashboard Cite

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Time Dependent, Dielectric Breakdown Characteristics of Ta2 O 5 / SiO2 Double Layers

Cited by 4 publications

References 14 publications

Ellipsometric Examination of Growth and Dissolution Rates of Ta2 O 5 Films Formed by Metalorganic Chemical Vapor Deposition

Ellipsometric Examination of Growth and Dissolution Rates of Ta2 O 5 Films Formed by Metalorganic Chemical Vapor Deposition

Chemical Vapor Deposition of Tantalum Oxide from Tetraethoxo(β-diketonato)tantalum(V) Complexes

Electrical characteristics of ferroelectric PZT thin films for DRAM applications

Contact Info

Product

Resources

About