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Effects of high temperature annealing over the range 400~176 on the leakage current of tantalum pen texide (TazO~) films deposited by reactive sputtering are investigated. Leakage current of polycrystalline TarO5 film (annealed above 700~ is about 107-10 s times larger than that of as-deposited amorphous film. However, it is found that leakage current in Ta20~ film annealed at 600~ increases drastically as well, even though the films have not yet recrystallized. TEM observation reveals that pinholes ranging from 5 nm to 15 nm in diameter are formed near the bottom of the depresw in Ta205 film annealed even at 600~ Electrical properties of the TarO5 films are discussed in terms of crystallographic properties such as pinhole growth and grain boundaries.

A model for stress-induced metal notching and voiding in very large-scale-integrated Al-Si (1%) metallization J.This paper presents a study on grain boundary fracture failures found in AI-Si interconnects during aging tests without electric current flow. Failure rate analysis and microscopic observation by transmission electron microscopy and scanning electron microscopy indicate that failures are caused by slitlike voids formed at grain boundaries during the relaxation process in AI-Si conductors stressed by temperature cycling under the volume constraint of passivation films. Conductors are seen to fail in two modes; an open mode at bamboolike grain boundaries and a high-resistance mode at grain boundaries having large silicon precipitates.