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A new transistor with two‐level metal electrodes is developed in order to allow for the automatic wire bonding process and at the same time to minimize the chip area. To meet these requirements, the second‐level electrodes are formed right above the active area of a conventional transistor by utilizing the PMP (planar metallization with polymer) technology (1) with PIQ (polyimide iso‐indroquinazolinedione) film as an insulating layer. PIQ is a thermally stable polyimide‐type resin specially synthesized by us for the semiconductor devices. Through several types of reliability tests, it is shown that the new transistor exhibits excellent reliability in its device characteristics, indicating that the new structure satisfies the stringent reliability and productivity requirements for transistors molded in plastics.

A new technology for leveling LSI surfaces was developed by stabilizing the sputter etch rate of organic resists. Projections on LSI surfaces were coated with an organic resist, and etched off together with the resist, leaving a smooth surface. It has been reported by Vossen et al. that the sputter etch rate of organic resists was irreproducible and varied when they were etched together with oxides, such as SiO2. However, in this work, the etch rate of those resists could be m~de very stable and was nearly equal to that of SiO2 and SigN4 when they were etched in highly purified argon atmosphere.* Electrochemical Society Active Member. 1 Work carried out while on leave from Fritz Haber Institut tier MPG,

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