Time Discrete Voltage Sensing and Iterative Programming Control for a 4F&lt;sup&gt;2&lt;/sup&gt; Multilevel CBRAM

Schrogmeier, P.; Angerbauer, M.; Dietrich, Stefan; Ivanov, Milena; Honigschmid, H.; Liaw, C.M.; Markert, M.; Symanczyk, R.; Altimime, L.; Bournat, S.; Müller, Georg

doi:10.1109/vlsic.2007.4342708

Cited by 11 publications

(8 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Active arrays, in which each cell contains one transistor for device selection and one electrochemical resistive element (1T-1R) have been demonstrated by various groups [50,73,74]. A schematic of such an array is shown in figure 15.…”

Section: Active Arraysmentioning

confidence: 99%

Electrochemical metallization memories—fundamentals, applications, prospects

Valov

Waser

Jameson³

et al. 2011

Nanotechnology

786

545

View full text Add to dashboard Cite

This review focuses on electrochemical metallization memory cells (ECM), highlighting their advantages as the next generation memories. In a brief introduction, the basic switching mechanism of ECM cells is described and the historical development is sketched. In a second part, the full spectra of materials and material combinations used for memory device prototypes and for dedicated studies are presented. In a third part, the specific thermodynamics and kinetics of nanosized electrochemical cells are described. The overlapping of the space charge layers is found to be most relevant for the cell properties at rest. The major factors determining the functionality of the ECM cells are the electrode reaction and the transport kinetics. Depending on electrode and/or electrolyte material electron transfer, electro-crystallization or slow diffusion under strong electric fields can be rate determining. In the fourth part, the major device characteristics of ECM cells are explained. Emphasis is placed on switching speed, forming and SET/RESET voltage, R(ON) to R(OFF) ratio, endurance and retention, and scaling potentials. In the last part, circuit design aspects of ECM arrays are discussed, including the pros and cons of active and passive arrays. In the case of passive arrays, the fundamental sneak path problem is described and as well as a possible solution by two anti-serial (complementary) interconnected resistive switches per cell. Furthermore, the prospects of ECM with regard to further scalability and the ability for multi-bit data storage are addressed.

show abstract

Section: Active Arraysmentioning

confidence: 99%

Electrochemical metallization memories—fundamentals, applications, prospects

Valov

Waser

Jameson³

et al. 2011

Nanotechnology

786

545

View full text Add to dashboard Cite

show abstract

“…In contrast, the Ag-doped Ge x S 1-x system has been shown to survive back-end temperatures exceeding 4008C [71], has a high ON/OFF ratio, and also offers fast speeds (;1 ls or faster). Using this system, 2-Mb memory arrays have been fabricated in 90-nm technology with MLC capability [73], but retention and endurance still remain to be demonstrated for these germanium sulfide systems.…”

Section: Resistive Ram and Solid-electrolyte Memorymentioning

confidence: 99%

Overview of candidate device technologies for storage-class memory

et al. 2008

View full text Add to dashboard Cite

Storage-class memory (SCM) combines the benefits of a solidstate memory, such as high performance and robustness, with the archival capabilities and low cost of conventional hard-disk magnetic storage. Such a device would require a solid-state nonvolatile memory technology that could be manufactured at an extremely high effective areal density using some combination of sublithographic patterning techniques, multiple bits per cell, and multiple layers of devices. We review the candidate solid-state nonvolatile memory technologies that potentially could be used to construct such an SCM. We discuss evolutionary extensions of conventional flash memory, such as SONOS (silicon-oxide-nitrideoxide-silicon) and nanotraps, as well as a number of revolutionary new memory technologies. We review the capabilities of ferroelectric, magnetic, phase-change, and resistive random-access memories, including perovskites and solid electrolytes, and finally organic and polymeric memory. The potential for practical scaling to ultrahigh effective areal density for each of these candidate technologies is then compared.

show abstract

“…This technology is known in the industry as conductive bridging random access memory (CBRAM) [97], [98] but various other terms are used, including EMB in the ITRS, electrochemical metallization (ECM) memory [5] and atomic switch [99], as well as generic expressions such as (nano)ionic memory or cation memory. The original term of art, programmable metallization cell (PMC), is now typically used to describe the technology platform that incorporates a range of applications beyond memory [100]- [102].…”

Section: Ion Conducting Devicesmentioning

confidence: 99%

Reconfigurable Memristive Device Technologies

et al. 2015

View full text Add to dashboard Cite

In this paper, we present a review of the state of the art in memristor technologies. Along with ionic conducting devices [i.e., conductive bridging random access memory (CBRAM)], we include phase change, and organic/organo–metallic technologies, and we review the most recent advances in oxidebased memristor technologies. We present progress on 3-D integration techniques, and we discuss the behavior of more mature memristive technologies in extreme environments

show abstract

Time Discrete Voltage Sensing and Iterative Programming Control for a 4F<sup>2</sup> Multilevel CBRAM

Cited by 11 publications

References 2 publications

Electrochemical metallization memories—fundamentals, applications, prospects

Electrochemical metallization memories—fundamentals, applications, prospects

Overview of candidate device technologies for storage-class memory

Reconfigurable Memristive Device Technologies

Contact Info

Product

Resources

About