Time Resolved Imaging at low power supply on 45nm technology

Bascoul, Guillaume; Perdu, Philippe; Celi, G.; Dudit, S.; Lewis, Dean

doi:10.1109/ipfa.2011.5992726

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Introduction4

Photon Counting Ingaas Camera1

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Cited by 9 publications

(5 citation statements)

References 6 publications

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“…Moreover, QE is still good enough to get signal in the area between 1550 nm and 1700 nm. This camera is very efficient for Time Resolved Imaging applications (TRI, [9]). …”

Section: Photon Counting Ingaas Cameramentioning

confidence: 99%

High performance thermography with InGaAs photon counting camera

Bascoul¹,

Perdu²,

Béguin³

et al. 2012

Microelectronics Reliability

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“…Moreover, QE is still good enough to get signal in the area between 1550 nm and 1700 nm. This camera is very efficient for Time Resolved Imaging applications (TRI, [9]). …”

Section: Photon Counting Ingaas Cameramentioning

confidence: 99%

High performance thermography with InGaAs photon counting camera

Bascoul¹,

Perdu²,

Béguin³

et al. 2012

Microelectronics Reliability

Self Cite

View full text Add to dashboard Cite

“…When the device is analyzed with contactless optical tools like dynamic light emission [2,3] or electro-optical probing [4,5], for example, the operator relies on NIR (Near Infrared) backside imaging of the circuit to navigate on it. For various reasons, the signal acquired by the optical sensor can be of poor quality.…”

Section: Introductionmentioning

confidence: 99%

Pattern image enhancement by extended depth of field

Chef¹,

Billiot²,

Jacquir³

et al. 2014

Microelectronics Reliability

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“…Time Resolved Emission (TRE) microscopy possesses a capability to detect photons with high S/N ratio under the weak light condition, so that it has been applied for observation of small LSI signals [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Time resolved emission observation from top surface in avalanche breakdown of power MOSFET

Endo

Norimatsu

Nakashima

et al. 2014

2014 IEEE International Reliability Physics Symposium

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Time resolved emission (TRE) microscopy can detect photons, and its signal-to-noise (S/N) ratio is higher than that of Photo Emission Microscopy under weak emission conditions. This is the first study to show the TRE observation in avalanche breakdown through thick source metal from the top surface of power MOSFET. TRE is an effective method to detect several photons, however, the strong emission range saturate the output of TRE detectors and this phenomenon disturbs accurate photon measurement. Our study results show that the photon count behavior is consistent with the oscillation of avalanche current. Also, the distribution of photon count density in the regions of the device is different, which indicates that there is distribution of current density in MOSFET. The described approach has the capacity to observe the current density distribution without any power device electrode metal removal and can be applied to measure the oscillation behavior of avalanche current.

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Time Resolved Imaging at low power supply on 45nm technology

Cited by 9 publications

References 6 publications

High performance thermography with InGaAs photon counting camera

High performance thermography with InGaAs photon counting camera

Pattern image enhancement by extended depth of field

Time resolved emission observation from top surface in avalanche breakdown of power MOSFET

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