Time-resolved reflectance difference spectroscopy study of Sb- and As-terminated InP(100) surfaces

Growth monitoring of GaAsSb:C/InP heterostructures with reflectance anisotropy spectroscopy

“…Since the general shape of these RAS spectra is similar for InP or GaAs contaminated with residual Sb [8,9] and also GaSb [6,7,10,12], the 3.8 eV peak is related to the presence of Sb on the surface. Published RAS spectra during TMSb exposure of InP [8] as well as our own results clearly show a stronger change of the RAS signal at 3.8 eV compared to the P-dimer-related 2.8 eV peak. Therefore, a dynamic study of Sb surface coverages including exchange and interface formation processes is possible by time-resolved RAS measurements at 3.8 eV.…”

“…The characterization of the uppermost atomic layers involving bond symmetries and properties of adsorbates allows for a direct study of surface and interface characteristics. Only few reports about RAS studies of Sb-related MOVPE growth can be found in the literature [6][7][8][9][10]. Pitts et al presented results of an Sb-rich floating layer during the growth of GaAs on GaSb [6].…”

“…Pitts et al presented results of an Sb-rich floating layer during the growth of GaAs on GaSb [6]. Wang et al reported on very persistent Sb surface layers on InP compared to As-terminated InP surfaces [8].…”

Surface modifications induced by bismuth on (001) GaAs surfaces

“…In OMVPE growth, surfactants can induce strong bulk effects such as the suppression of atomic ordering [3,6] and improvement in surface morphology [2], of many III-V materials without incorporation in the bulk. Recent works have shown that reflectance difference spectroscopy (RDS) is extremely sensitive to surface adsorbates such as Sb on GaAs and InP [7,8]. In this work, we report the identification of RDS spectra for GaAs (0 0 1) surfaces in the presence of small quantities of TMBi vapor.…”

Segregation and desorption of antimony in InP (001) in MOVPE

“…When Sb is present on the surface the RAS signal shows a prominent feature around 3.5-4 eV [5,8,9]. Thus, most transient data were recorded at 3.8 eV photon energy.…”