Tin contamination in PQFN package and its effects on wire bondability

Zong, Fei; Wang, Zhi‐jie; Yang, Xu; Niu, Jiyong; Zhang, Han‐min

doi:10.1108/mi-11-2012-0075

Cited by 5 publications

(2 citation statements)

References 10 publications

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“…Surface contamination at the bonding interface is the key factor that may cause the lifted ball bond issue [17], [18]. The contaminant is introduced not only by the LED chip manufacturing material, i.e., passivation residue, and photoresist residue, but also by the LED assembly process before wire bonding, i.e., oxidation and epoxy outgassing during die attach epoxy curing [19]- [21]. Therefore, LED chip bond pad surface contaminant removal prior to the wire bonding process is required to improve the reliability and the integrity of wire bond.…”

Section: Introductionmentioning

confidence: 99%

Comparison of Radio Frequency and Microwave Plasma Treatments on LED Chip Bond Pad for Wire Bond Application

Devarajan

Lee²,

Lacey³

2015

IEEE Trans. Compon., Packag. Manufact. Technol.

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The efficiencies of argon radio frequency [Ar(RF)] and argon microwave [Ar(MW)] plasma treatments were compared in terms of contaminant removal and wire bond interfacial adhesion quality in this paper. The efficiency in contaminant removal was analyzed by applying Ar(RF) and Ar(MW) plasma treatments with operating frequencies of 13.56 MHz and 2.45 GHz, respectively, onto the light-emitting diode chip bond pad prior to the wire bonding process. Surface characterization results show that Ar(MW) plasma treatment is able to remove the bond pad surface contaminant and improve the bond pad surface roughness more effectively than Ar(RF) plasma treatment. Moreover, contact angle measurement results show that bond pad samples after Ar(MW) plasma treatment have higher surface free energy compared with Ar(RF) plasma treatment. To study the improvement of wire bond interfacial adhesion after Ar(RF) and Ar(MW) plasma treatments, the bond pad samples were wire-bonded via the thermosonic wire bonding method and examined with the ball shear test. The ball shear test results show that Ar(MW) plasma treatment leads to a better improvement of wire bond interfacial adhesion compared with Ar(RF) plasma treatment.Index Terms-Light-emitting diode (LED), plasma treatment, radio frequency (RF) and microwave (MW), surface cleaning, wire bond.

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Section: Introductionmentioning

confidence: 99%

Comparison of Radio Frequency and Microwave Plasma Treatments on LED Chip Bond Pad for Wire Bond Application

Devarajan

Lee²,

Lacey³

2015

IEEE Trans. Compon., Packag. Manufact. Technol.

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“…2 was the crosssection of a typical design. The device function was achieved with the control die which was supplied by the power die [2]. All PQFN device are required to pass higher reliability test, such as TC500 (Temperature cycle), HTB1008hours (Higher temperature baking) and AC96hours (Autoclave).…”

Section: Introductionmentioning

confidence: 99%

Power QFN Tiger device down bond bond-ability study

Zhang

Yin³

et al. 2014

2014 15th International Conference on Electronic Packaging Technology

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Power QFN Tiger device failed the down bond open on TC500 or application. Failure analysis verified that it was caused by down bond delamination. Finite Element Analysis modeling was established to analyze the Tiger down bond stress and find out a new position with relative less stress impact as down bond end point. Meanwhile, new bonding model with security loop was applied to down bond to improve the bondability and passed all reliability test.

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Investigation of oxygen followed by argon plasma treatment on LED chip bond pad for wire bond application

Devarajan

Lee

Lacey³

2015

Soldering &Amp; Surface Mount Technology

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Purpose – The purpose of this paper is to investigate the efficiencies of argon (Ar), oxygen (O2) and O2 followed by Ar (O2→Ar) plasma treatments in terms of contaminant removal and wire bond interfacial adhesion improvement. The aim of this study is to resolve the “lifted ball bond” issue, which is one of the critical reliability checkpoints for light emitting diodes (LEDs) in automotive applications. Design/methodology/approach – Ar, O2 and O2→Ar plasma treatments were applied to LED chip bond pad prior to wire bonding process with different treatment durations. Various surface characterization methods and contact angle measurement were then used to characterize the surface properties of these chip bond pads. To validate the improvements of Ar, O2 and O2→Ar plasma treatments to the wire bond interfacial adhesion, the chip bond pads were wire bonded and examined with a ball shear test. Moreover, the contact resistance of the wire bond interfaces was also measured by using four-point probe electrical measurements to complement the interfacial adhesion validation. Findings – Surface characterization results show that O2→Ar plasma treatment was able to remove the contaminant while maintaining relatively low oxygen impurity content on the bond pad surface after the treatment and was more effective as compared with the O2 and Ar plasma treatments. However, O2→Ar plasma treatment also simultaneously reduced high-polarity bonds on the chip bond pad, leading to a lower surface free energy than that with the O2 plasma treatment. Ball shear test and contact resistance results showed that wire bond interfacial adhesion improvement after the O2→Ar plasma treatment is lower than that with the O2 plasma treatment, although it has the highest efficiency in surface contaminant removal. Originality/value – To resolve “lifted ball bond” issue, optimization of plasma gas composition ratios and parameters for respective Ar and O2 plasma treatments has been widely reported in many literatures; however, the O2→Ar plasma treatment is still rarely focused. Moreover, the observation that wire bond interfacial adhesion improvement after O2→Ar plasma treatment is lower than that with the O2 plasma treatment although it has the highest efficiency in surface contaminant removal also has not been reported on similar studies elsewhere.

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Tin contamination in PQFN package and its effects on wire bondability

Cited by 5 publications

References 10 publications

Comparison of Radio Frequency and Microwave Plasma Treatments on LED Chip Bond Pad for Wire Bond Application

Comparison of Radio Frequency and Microwave Plasma Treatments on LED Chip Bond Pad for Wire Bond Application

Power QFN Tiger device down bond bond-ability study

Investigation of oxygen followed by argon plasma treatment on LED chip bond pad for wire bond application

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