Tin Oxide Thin Film Transistors

Aoki, Akira; Sasakura, Hiroshi

doi:10.1143/jjap.9.582

Cited by 124 publications

(58 citation statements)

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“…One such transparent oxide semiconductor material is tin oxide (SnO 2 ), which has high optical transmittance in the visible range and low electrical resistance [2][3][4]. SnO 2 is an n-type semiconductor that forms as a result of an excess of electrons produced by ionization of oxygen vacancies, and interstitial tin atoms that are generated during the crystal growth process.…”

Section: Introductionmentioning

confidence: 99%

Optical and Electronic Properties of SnO₂Thin Films Fabricated Using the SILAR Method

Jang¹,

Yim²,

Cho³

et al. 2015

Journal of Sensor Science and Technology

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Tin oxide thin films were fabricated on glass substrates by the successive ionic layer adsorption and reaction (SILAR) method at room temperature and ambient pressure. Before measuring their properties, all samples were annealed at 500 o C for 2 h in air. Film thickness increased with the number of cycles; X-ray diffraction patterns for the annealed SnO 2 thin films indicated a SnO 2 single phase. Thickness of the SnO 2 films increased from 12 to 50 nm as the number of cycles increased from 20 to 60. Although the optical transmittance decreased with thickness, 50 nm SnO 2 thin films exhibited a high value of more than 85%. Regarding electronic properties, sheet resistance of the films decreased as thickness increased; however, the measured resistivity of the thin film was nearly constant with thickness (3×10 -4 ohm/cm). From Hall measurements, the 50 nm thickness SnO 2 thin film had the highest mobility of the samples (8.6 cm 2 /(V·s)). In conclusion, optical and electronic properties of SnO 2 thin films could be controlled by adjusting the number of SILAR cycles.

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Section: Introductionmentioning

confidence: 99%

Optical and Electronic Properties of SnO₂Thin Films Fabricated Using the SILAR Method

Jang¹,

Yim²,

Cho³

et al. 2015

Journal of Sensor Science and Technology

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“…In the past few years, SnO 2 is an important n-type wide-energy-gap semiconductor (Eg = 3.64 eV, 330 K) which has a wide range of applications such as in solid-state gas sensors [1], transparent conducting electrodes [2], rechargeable Li batteries [3], and optical electronic devices [4]. During the past decade, SnO 2 nanostructures have been one of the most important oxide nanostructures due to their properties and potential applications [5,6].…”

Section: Introductionmentioning

confidence: 99%

Preparation and characterization of SnO2 nanoparticles by hydrothermal route

Patil¹,

Kajale

Gaikwad³

et al. 2012

Int Nano Lett

168

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This paper demonstrates the synthesis of SnO 2 nanoparticles using a simple hydrothermal route in the presence of the surfactant hydrazine at 100°C for 12 h. X-ray diffraction (XRD), field emission scanning electron microscopy, and transmission electron microscopy (TEM) were employed to characterize the as-prepared product, and optical property was studied by UV-visible diffuse reflectance spectroscopy (DRS). The XRD pattern of the as-prepared sample is indexed to the tetragonal structure of SnO 2 , and the calculated particle size is 22.4 nm, which is further confirmed by TEM. The selected area electron diffraction patterns showed continuous ring patterns without any additional diffraction spots and rings of secondary phases, revealing their crystalline structure. Analysis of the DRS spectrum showed the bandgap of the synthesized SnO 2 to be 3.6 eV. The anionic surfactant hydrazine plays a key role in the formation of the SnO 2 nanostructures. A probable reaction for the formation of SnO 2 nanoparticles is proposed.

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“…Therefore, simple synthesis routes for SnO 2 nanoparticles with a diameter less than or comparable to QDs which is 2.7 nm [8] for tin oxide are extremely important in materials research. SnO 2 is an important n-type wide-energy-gap semiconductor (E g = 3.64 eV, 330 K) which has a wide range of applications such as in solid-state gas sensors [9], transparent conducting electrodes [10], rechargeable Li batteries [11] and optical electronic devices [12]. During the past decade, SnO 2 nanostructures have been one of the most important oxide nanostructures due to their properties and potential applications [13,14].…”

Section: Introductionmentioning

confidence: 99%

Synthesis of SnO2 nanopowders by a sol-gel process using propanol-isopropanol mixture

Hassanzadeh¹,

Moazzez²,

Haghgooie

et al. 2008

Open Chemistry

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A simple sol-gel process is proposed for synthesizing SnO 2 nanopowders utilizing normal propanol and isopropanol mixture instead of just using normal alcohols such as ethanol, propanol or butanol for Sol preparation. No surfactant was used in this Sol preparation process. The structure of sol is studied by FT-IR-ATR technique. On altering propanol to isopropanol ratio, three different nanopowders were obtained. X-ray powder diffraction, high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction pattern (SAED) and BET techniques were used to characterize prepared powders. Results show that smaller grain size was obtained via altering alcohols ratio. In addition, Merck commercial SnO 2 powder was also used as a reference material for comparing purposes; because it has nanometer scale (ca. 60 nm). HRTEM images show that obtained nanopowders were polycrystalline and their average diameters fall into the range of 6-80 nm. Finally, the effect of alkoxide ligand size through sol-gel synthesis on product particle size is discussed.© Versita Warsaw and Springer-Verlag Berlin Heidelberg.

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Tin Oxide Thin Film Transistors

Cited by 124 publications

References 1 publication

Optical and Electronic Properties of SnO₂Thin Films Fabricated Using the SILAR Method

Optical and Electronic Properties of SnO₂Thin Films Fabricated Using the SILAR Method

Preparation and characterization of SnO2 nanoparticles by hydrothermal route

Synthesis of SnO2 nanopowders by a sol-gel process using propanol-isopropanol mixture

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Tin Oxide Thin Film Transistors

Cited by 124 publications

References 1 publication

Optical and Electronic Properties of SnO2Thin Films Fabricated Using the SILAR Method

Optical and Electronic Properties of SnO2Thin Films Fabricated Using the SILAR Method

Preparation and characterization of SnO2 nanoparticles by hydrothermal route

Synthesis of SnO2 nanopowders by a sol-gel process using propanol-isopropanol mixture

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Product

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Optical and Electronic Properties of SnO₂Thin Films Fabricated Using the SILAR Method

Optical and Electronic Properties of SnO₂Thin Films Fabricated Using the SILAR Method