Tin surface segregation, desorption, and island formation during post-growth annealing of strained epitaxial Ge1−xSnx layer on Ge(001) substrate

Wang, Wei; Li, Lingzi; Zhou, Qian; Pan, Jisheng; Zhang, Zheng; Tok, Eng Soon; Yeo, Yee-Chia

doi:10.1016/j.apsusc.2014.10.011

Cited by 48 publications

(31 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Li et al reported that a Sn-rich surface layer would form when Ge 0.922 Sn 0.078 is annealed at 620°C [23]. A similar phenomenon occurs on Ge 0.915 Sn 0.085 surface after annealing at 500°C [24]. For Sn composition as high as 17%, self-assembled Sn wires can form at an annealing temperature as low as 280°C [25].…”

Section: Introductionmentioning

confidence: 87%

Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality

Lei

Wang

Zhang

et al. 2016

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

The effect of sulfur passivation of the surface of Ge 0.83 Sn 0.17 is investigated. X-ray photoelectron spectroscopy (XPS) was used to examine the interfacial property between HfO 2 and Ge 0.83 Sn 0.17 . Sulfur passivation is effective in reducing both the Ge oxides and Sn oxides formation and the Sn atoms segregation. In addition, sulfur passivation reduces the interface trap density D it at the HfO 2 /Ge 0.83 Sn 0.17 interface from the valence band edge to the midgap. After the implementation of sulfur passivation, Ge 0.83 Sn 0.17 p-MOSFETs show improved subthreshold swing S and effective hole mobility μ eff . 25% μ eff enhancement can be observed in Ge 0.83 Sn 0.17 p-MOSFETs with sulfur passivation at a high inversion carrier density N inv of 1 × 10 13 cm −2 .

show abstract

Section: Introductionmentioning

confidence: 87%

Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality

Lei

Wang

Zhang

et al. 2016

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

show abstract

“…Therefore, Sn atoms often precipitate in a GeSn(Si) layer and segregate on a GeSn(Si) surface during deposition and annealing after GeSn(Si) layer formation (referred to as PDA) [20, 21, 94]. Furthermore, high deposition temperatures and PDA at high temperatures induce Sn desorption from the surface [20, 21, 95].…”

Section: Heterostructures Interfaces and Defect Propertiesmentioning

confidence: 99%

Growth and applications of GeSn-related group-IV semiconductor materials

Zaima

Nakatsuka

Taoka

et al. 2015

Science and Technology of Advanced Materials

176

109

View full text Add to dashboard Cite

We review the technology of Ge1−xSnx-related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge1−xSnx-related materials provide novel engineering of the crystal growth, strain structure, and energy band alignment for realising various applications not only in electronics, but also in optoelectronics. We introduce our recent achievements in the crystal growth of Ge1−xSnx-related material thin films and the studies of the electronic properties of thin films, metals/Ge1−xSnx, and insulators/Ge1−xSnx interfaces. We also review recent studies related to the crystal growth, energy band engineering, and device applications of Ge1−xSnx-related materials, as well as the reported performances of electronic devices using Ge1−xSnx related materials.

show abstract

“…For practical applications in optoelectronic and electric devices, the thermal stability of Ge 1−x Sn x material is a crucial property which has been widely studied and reported [17,23,24,[41][42][43][44][45]. Zaumseil et al showed that the tin segregation temperature of Ge 1−x Sn x alloys increases with decreasing Sn content, and that Ge 0.91 Sn 0.09 was stable at temperatures up to 400°C [17].…”

Section: Resultsmentioning

confidence: 99%

Facile synthesis of Ge_1−xSn_x nanowires

Al-Salim

Lim

et al. 2020

Mater. Res. Express

View full text Add to dashboard Cite

We report a facile one-pot solution phase synthesis of one-dimensional Ge 1−x Sn x nanowires. These nanowires were synthesized in situ via a solution-liquid-solid (SLS) approach in which triphenylchlorogermane was reduced by sodium borohydride in the presence of tin nanoparticle seeds. Straight Ge 1−x Sn x nanowires were obtained with an average diameter of 60±20 nm and an approximate aspect ratio of 100. Energy-dispersive x-ray spectroscopy (EDX) and powder x-ray diffraction (PXRD) analysis revealed that tin was homogeneously incorporated within the germanium lattices at levels up to 10 at%, resulting in a measured lattice constant of 0.5742 nm. The crystal structure and growth orientation of the nanowires were investigated using high-resolution transmission electron microscopy (HRTEM). The nanowires adopted a face-centred-cubic structure with individual wires exhibiting growth along either the 〈111〉, 〈110〉 or 〈112〉 directions, in common with other group IV nanowires. Growth in the 〈112〉 direction was found to be accompanied by longitudinal planar twin defects.

show abstract

Tin surface segregation, desorption, and island formation during post-growth annealing of strained epitaxial Ge1−xSnx layer on Ge(001) substrate

Cited by 48 publications

References 29 publications

Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality

Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality

Growth and applications of GeSn-related group-IV semiconductor materials

Facile synthesis of Ge_1−xSn_x nanowires

Contact Info

Product

Resources

About

Tin surface segregation, desorption, and island formation during post-growth annealing of strained epitaxial Ge1−xSnx layer on Ge(001) substrate

Cited by 48 publications

References 29 publications

Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality

Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality

Growth and applications of GeSn-related group-IV semiconductor materials

Facile synthesis of Ge1−xSnx nanowires

Contact Info

Product

Resources

About

Facile synthesis of Ge_1−xSn_x nanowires