TiSi2 phase transformation characteristics on narrow devices

Miles, G. L.; Mann, R. W.; Bertsch, John E.

doi:10.1016/s0040-6090(96)09023-2

Cited by 23 publications

(9 citation statements)

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“…In ex situ electrical testing only one feature is measured at a time, and the large contact probes have been shown to affect the results of the measurement [35]. In ex situ electrical testing only one feature is measured at a time, and the large contact probes have been shown to affect the results of the measurement [35].…”

Section: Figure 12mentioning

confidence: 99%

Synchrotron X-ray scattering techniques for microelectronics-related materials studies

Jordan-Sweet

2000

IBM J. Res. & Dev.

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Synchrotron X-ray scattering techniques for microelectronicsrelated materials studies X-ray diffraction techniques using synchrotron radiation play a vital role in the understanding of structural behavior for a wide range of materials important in microelectronics. The extremely high flux of X-rays produced by synchrotron storage rings makes it possible to probe layers and interfaces in complicated stacked structures, characterize low-atomicweight materials such as polymers, and study in situ phase transformations, to name only a few applications. In this paper, following an introduction to synchrotron radiation, we describe the capabilities of the IBM/MIT X-ray beamlines at the National Synchrotron Light Source (NSLS), Brookhaven National Laboratory (BNL). A range of techniques are introduced, and examples of their applicability to the study of microelectronics-related materials phenomena are described.

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Section: Figure 12mentioning

confidence: 99%

Synchrotron X-ray scattering techniques for microelectronics-related materials studies

Jordan-Sweet

2000

IBM J. Res. & Dev.

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“…Many factors, such as the grain size of the C49 phase [6], the Si substrate doping and orientation [7,8], the Ti film thickness [8] and the device dimensions [9][10][11][12], have been seen to influence the temperature at which the transformation of crystallographic phase of the film occurs. In particular, the role of the pattern dimensions has not been completely clarified due to the problem of phase identification in very small areas.…”

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confidence: 99%

“…In particular, the role of the pattern dimensions has not been completely clarified due to the problem of phase identification in very small areas. The only explanation claimed to account for this effect is, until now, the reduced triple-grain boundary number due to the small pattern dimension [9][10][11][12].…”

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confidence: 99%

“…The most common experimental techniques employed to monitor the phase transition of TiSi 2 are transmission electron microscopy (TEM), X-ray diffraction (XRD) and film resistivity measurements [5,[9][10][11][12]. Raman spectroscopy has also been applied for TiSi 2 phase identification both on blanket films [8,13], and, recently, on small patterns [14], where it demonstrated to be a powerful technique.…”

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Micro-Raman study of the factors limiting the TiSi ₂ C54 phase formation in submicron patterns

Meinardi

Moro

Sabbadini³

et al. 1998

Europhys. Lett.

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A detailed micro-Raman analysis of the C49-C54 structural phase transformation in a TiSi2 patterned film is reported. These results emphasise that a reduced density of triplegrain boundaries, considered to be the nucleation sites of the C54 phase, is not sufficient to explain the observed difficulty to convert the C49 in small areas. Other effects, such as the C54 effective nucleation probability on a given nucleation centre and the C54 ability to propagate through the film, play a key role in the C49-C54 conversion process, and affect the transition temperature required for sub-micron devices.

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“…[20] and others [88][89][90] shows that the activation energy (Ea) of C49-to-C54 conversion is independent of linewidth provided that the titanium (Ti) deposition thickness remain the same. As the linewidth annd C49 grain size depend on the annealing time, the model below explained the change in density of C54 nuclei, that is assumed to be proportional to the density of triple grain boundaries.…”

Section: Film Thickness Effectmentioning

confidence: 99%

Development of metal silicides for deep submicron polycrystalline silicon gate

Pang¹

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Chapter 1: Introduction 1.1 General Overview 1.2 Objectives Chapter 2: Background 2.1 Fundamentals of Thin Film Reaction 2.2 Growth Kinetics of Titanium Silicide 2.3 Microstructural Aspects and Mechanism of C49-to-C54 2.4 Issues affecting formation in Narrow Linewidth 2.4.1 Film Thickness Effect 2.4.2 Narrow Linewidth Effect 2.4.3 Stress Effect 2.4.4 Dopants Effect 2.5 Ways of improving C54 phase formation 2.5.1 Preamorphisation (PAI & ITM) 2.5.2 Bilayer Alloy and alloy implantation 2.5.3 Spike Annealing. .

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TiSi2 phase transformation characteristics on narrow devices

Cited by 23 publications

References 5 publications

Synchrotron X-ray scattering techniques for microelectronics-related materials studies

Synchrotron X-ray scattering techniques for microelectronics-related materials studies

Micro-Raman study of the factors limiting the TiSi ₂ C54 phase formation in submicron patterns

Development of metal silicides for deep submicron polycrystalline silicon gate

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TiSi2 phase transformation characteristics on narrow devices

Cited by 23 publications

References 5 publications

Synchrotron X-ray scattering techniques for microelectronics-related materials studies

Synchrotron X-ray scattering techniques for microelectronics-related materials studies

Micro-Raman study of the factors limiting the TiSi 2 C54 phase formation in submicron patterns

Development of metal silicides for deep submicron polycrystalline silicon gate

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Product

Resources

About

Micro-Raman study of the factors limiting the TiSi ₂ C54 phase formation in submicron patterns