2009
DOI: 10.1051/epjap/2009179
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Titanium dioxide thin films deposition by direct current hollow cathode magnetron sputtering

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Cited by 12 publications
(5 citation statements)
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“…In addition, at lower oxygen concentrations the plasma sheath in front of the film supports higher potential drop thus more energetic bombardment is promoted by Ar ion flux. This ion impact may cause formation of films with higher roughness, lattice defects and large amount of peaks and valleys 12,13 where all these effects play an important role to increase the bond strength between Y-TZP and resin cement. On the other hand, as the surface modification by ion bombardment in reactive magnetron sputtering discharges is about of few nanometers 13 , it was not possible to observe significant modifications on the films surface by images of optical profilometry in Figure 6.…”
Section: Shear Testing Optical Microscopy and Scanning Electron Micrmentioning
confidence: 99%
“…In addition, at lower oxygen concentrations the plasma sheath in front of the film supports higher potential drop thus more energetic bombardment is promoted by Ar ion flux. This ion impact may cause formation of films with higher roughness, lattice defects and large amount of peaks and valleys 12,13 where all these effects play an important role to increase the bond strength between Y-TZP and resin cement. On the other hand, as the surface modification by ion bombardment in reactive magnetron sputtering discharges is about of few nanometers 13 , it was not possible to observe significant modifications on the films surface by images of optical profilometry in Figure 6.…”
Section: Shear Testing Optical Microscopy and Scanning Electron Micrmentioning
confidence: 99%
“…Paul et al used this ratio to study hydrophobicity of diamond like carbon films and interpreted results in terms of hybridization [17]. Recently CHC magnetron sputtering system was used by Duarte et al to deposit crystalline titanium dioxide thin film on p-silicon substrate [18]. 4…”
Section: Introductionmentioning
confidence: 99%
“…The described IM configuration uses the principle of sputtering, which was described by Thornton in 1977 [ 12 ]. The main difference of the IM prototype used in this work with respect to the standard IM deposition process was the positive potential connection to the sample holder (see Figure 1 ), instead of the more common negative cathode connection [ 14 ]. This aspect might have some beneficial effects on the deposition process and deposit growth.…”
Section: Discussionmentioning
confidence: 99%
“…There were no examples of inverted or cylindrical source utilisation found in the literature. However, in the case of sputtering, one work reports a similar inverted magnetron approach [ 14 ]. Duarte et al, in their work, use an IM source with permanent magnets and a sample holder that can change its position inside the hollow cathode.…”
Section: Discussionmentioning
confidence: 99%
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