Total Dose Hardness of <formula formulatype="inline"> <tex Notation="TeX">${\rm TiN}/{\rm HfO}_{\rm x}/{\rm TiN}$</tex></formula> Resistive Random Access Memory

Abstract

Resistive random access memory based on TiN/HfOx/TiN has been fabricated, with the stoichiometry of the layer altered through control of atomic layer deposition (ALD) temperature. Sweep and pulsed electrical characteristics were extracted before and after gamma irradiation. Monoclinic deposited at 400 did not result in resistive switching. Deposition at 300 and 350 resulted in cubic which switched successfully. Both stoichiometric and sub-oxides result in similar memory characteristics. All devices are shown to be radiation hard up to 10 Mrad(Si), independent of stoichiometry.

Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition

“…This is possibly due to the formation of an interfacial TiON layer at the interface between the metal oxide layer and the bottom TiN electrode which serves as an oxygen reservoir [31]. Similar bipolar switching behavior was also observed in HfO2 in the same device structure [32]. The formation of this filament switches the device from HRS to LRS.…”

γ-ray -induced Effects in Al:HfO2-based Memristor Devices for Memory and Sensor Applications

“…We found that the irradiated sample has more of 3+ that is approximately 20%, while it is approximately 15% for the pristine sample. This indicates that the γ-ray radiation breaks Hf-O bonds and creates Vo defects in HfO2 films [2]- [7]. We suggest that the radiation not only breaks the Hf-O bonding in the lattice and generates the Vo defects but also drives oxygen ions to the top and bottom interfaces, forming TiOx and PtOx interfacial layers.…”

“…EMRISTOR offers excellent promises for space applications due to its facile architecture, lightweight design, and low power consumption [1]; moreover, several groups suggested that memristor devices, especially HfO2based, are intrinsically rad-hard [2]- [7]. However, these reports focus on the reliability studies of the devices, while the potential beyond erasable memory applications exploiting radiationinduced effects has not yet been explored.…”