Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

Mo, Jianchu; Zhao, Xuran; Zhou, Min

doi:10.1155/2017/9685685

Cited by 5 publications

(1 citation statement)

References 13 publications

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“…Under the off state, the drain-gate terminal of the depletion-mode GaN HEMT and the source-drain channel of silicon MOSFET is the main current-leakage paths. Previous reports [14][15][16] showed that N-channel MOSFET is very sensitive to TID and that the drain current increases with the accumulated gamma-ray dose. In addition, the defect caused by neutron irradiation in the silicon layer and Si-SiO 2 interface could lead to an increase in the channel resistance and a decrease in the carriers' mobility in the MOSFET device.…”

Section: Discussionmentioning

confidence: 99%

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

et al. 2022

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This paper studies the synergistic effect of total ionizing dose (TID) and displacement damage dose (DDD) in enhancement-mode GaN high electron mobility transistor (HEMT) based on the p-GaN gate and cascode structure using neutron and 60Co gamma-ray irradiation. The results show that when the accumulated gamma-ray doses are up to 800k rad(Si), the leakage-current degradations of the two types of GaN HEMTs with 14 MeV neutron irradiation of 1.3 × 1012 n/cm2 and 3 × 1012 n/cm2 exhibit a lower degradation than the sum of the two separated effects. However, the threshold voltage shifts of the cascode structure GaN HEMT show a higher degradation when exposed to both TID and DDD effects. Moreover, the failure mechanisms of the synergistic effect in GaN HEMT are investigated using the scanning electron microscopy technique. It is shown that for the p-GaNHEMT, the increase in channel resistance and the degradation of two-dimensional electron gas mobility caused by neutron irradiation suppresses the increase in the TID leakage current. For the cascode structure HEMT, the neutron radiation-generated defects in the oxide layer of the metal–oxide–semiconductor field-effect transistor might capture holes induced by gamma-ray irradiation, resulting in a further increase in the number of trapped charges in the oxide layer.

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Section: Discussionmentioning

confidence: 99%

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

et al. 2022

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Synergistic effect of total ionizing dose and single event gate rupture in MOSFET with Si3N4–SiO2 stacked gate

Cao,

Liu,

Wang

et al. 2024

J Comput Electron

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Effect of x-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS gates

Qi¹,

Wang²,

Zhou³

et al. 2020

Nanotechnology and Precision Engineering

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Commercially available AlGaN/GaN high-electron-mobility transistors (HEMTs) are beginning to enter the public scene from a range of suppliers. Based on previous studies, commercial GaN-based electronics are expected to be tolerant to different types of irradiation in space. To test this assumption, we compared the characteristic electrical curves obtained at different X-ray irradiation doses for GaN HEMT devices manufactured by Infineon and Transphorm. The p-GaN-based device was found to be more robust with a stable threshold voltage, whereas the threshold voltage of the device with a metal-insulator-semiconductor gate was found to shift first in the negative and then the positive direction. This dynamic phenomenon is caused by the releasing and trapping effects of radiation-induced charges in the dielectric layer and at the interface of irradiated devices. As such, the p-GaN-gate-based GaN HEMT provides a promising solution for use as an electric source in space.

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Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO₂ and Si₃N₄/SiO₂ Gate Dielectrics

Cited by 5 publications

References 13 publications

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

Synergistic effect of total ionizing dose and single event gate rupture in MOSFET with Si3N4–SiO2 stacked gate

Effect of x-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS gates

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