Effect of x-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS gates

Abstract

Commercially available AlGaN/GaN high-electron-mobility transistors (HEMTs) are beginning to enter the public scene from a range of suppliers. Based on previous studies, commercial GaN-based electronics are expected to be tolerant to different types of irradiation in space. To test this assumption, we compared the characteristic electrical curves obtained at different X-ray irradiation doses for GaN HEMT devices manufactured by Infineon and Transphorm. The p-GaN-based device was found to be more robust with a stable threshold voltage, whereas the threshold voltage of the device with a metal-insulator-semiconductor gate was found to shift first in the negative and then the positive direction. This dynamic phenomenon is caused by the releasing and trapping effects of radiation-induced charges in the dielectric layer and at the interface of irradiated devices. As such, the p-GaN-gate-based GaN HEMT provides a promising solution for use as an electric source in space.

Interplay Between γ–Ray Irradiation and 3DEG for Dosimeter Applications

“…As a consequence, the operating conditions of the dosimeter remains intact. In addition, experimental reports [54][55] suggest the recovery of such irradiated samples post high temperature annealing process, which adds up to the stability of the DUT for dosimetry applications.…”

Enhancement of Breakdown Voltage in p-GaN Gate AlGaN/GaN HEMTs With a Stepped Hybrid GaN/AlN Buffer Layer

“…For power devices, improving the breakdown voltage (BV) and reducing the specific on-resistance (Ron,sp) are the primary research targets [5][6][7][8][9][10]. Recently, the p-GaN gate technology has become one of the most promising methods to obtain normally-off GaN HEMTs to meet the fail-safe operation and the simply gate drive topology [11][12]. Based on the p-GaN gate AlGaN/GaN HEMTs, some new technologies have been proposed and applied to obtain a high BV and lower Ron,sp.…”