An on-chip refractive index (RI) sensor, which is based on the localized surface plasmon resonance (LSPR) of periodic gold nanorings array, is presented. The structure parameters and performance of LSPR-based sensors are optimized by analyzing and comparing the LSPR extinction spectra. The mechanism of the enhancement of plasma resonance in a ring array is discussed by the simulation results. A feasible preparation scheme of the nanorings array is proposed and verified by coating a gold film and etching on the photonic crystals. Based on the optimum sensing structure, an RI sensor is constructed with a RI sensitivity of 577 nm/refractive index unit (RIU) and a figure of merit (FOM) of 6.1, which is approximately 2 times that of previous reports.

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In this paper, a method to extend the detection range of hydrogen sulfide (H2S) gas sensor is demonstrated. The sensor is based on AlGaN/GaN high electron mobility transistors (HEMTs) with Pt gate. It is observed that the as-fabricated devices exhibited sensing signal saturation at 30 ppm H2S exposure in dry air. A pre-treatment using H2 pulses in dry air ambient at 250 ºC was applied to extend the detection range of the sensor. The H2 treated H2S gas sensor was able to detect a higher H2S concentration up to 90 ppm at 250 ºC without complete saturation.