Total ionizing dose effects on 64 Mb 3.3 V DRAMs

Lee, C.I.; Nguyen, Dong; Johnston, A.H.

doi:10.1109/redw.1997.629805

Cited by 2 publications

(1 citation statement)

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“…In the reversed-biased depletion region, carrier generation due to displacement damage can increase the leakage current characteristics of affected bits, and this increase in the leakage current can contribute to destruction of the data stored in the corresponding bit cells [20]. The above mentioned damages can be recovered by high temperature annealing [16], [17].…”

Section: Introductionmentioning

confidence: 99%

Stuck Bits Study in DDR3 SDRAMs Using 45-MeV Proton Beam

Lim

Jeong

Bak

et al. 2015

IEEE Trans. Nucl. Sci.

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This work shares the observations of stuck bits by proton beam in DDR3 components in 3x-nm technologies. The DDR3 SDRAMs from four major DRAM manufacturers were tested with a 45-MeV proton beam at an operating frequency of 800 MHz. The beam exposure resulted in single bit upset (SBU) and multiple bit upsets (MBUs), as well as single and multiple stuck bits in a word due to micro-dose and displacement damage effects. The number of stuck bits reduced as the refresh interval duration was decreased. Moreover, for the tested samples, the stuck bits were recovered completely and could be run in the normal operation mode after annealing at . The occurrence of multiple stuck bits in a word was likely due to damages to the control logic and those stuck bits were recovered as well after annealing at .Index Terms-DDR3, displacement damage effect, DRAM cell retention time, DRAMs, proton beams, SDRAM, stuck bits, TID effect.

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Section: Introductionmentioning

confidence: 99%