Total Ionizing Dose Testing of a RadHard-by-Design FET Driver in a 0.35¿m Triple-Well Process

Hartwell, M.; Ryan, Kevin; Netherton, S.; Milliken, Peter; Kerwin, David B.

doi:10.1109/redw.2006.295474

Cited by 2 publications

(2 citation statements)

References 2 publications

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“…In general, both the soft and RHBD templates are inherently robust for TID due to the advanced small feature CMOS process [10], but the RHBD template is more robust for SEL. The increased SEL robustness in our RHBD template is due to the adoption of a triple-well process [11], more guard ring contacts, and reduced parasitic bipolar effects [2] attributed to the long distance between the well-edges and active regions (i.e. > 0.61µm in Fig.…”

Section: Rhbd Library Cell Templatementioning

confidence: 99%

Radiation-hardened library cell template and its total ionizing dose (TID) delay characterization in 65nm CMOS process

Chang

Chong

Shu

et al. 2014

2014 IEEE 57th International Midwest Symposium on Circuits and Systems (MWSCAS)

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We propose a radiation-hardened library cell template based on a 65nm CMOS process for the development of a radiation-hardened-by-design (RHBD) cell library for space and satellite (S&S) applications. The proposed library cell template adheres to the fixed-height variable-width standard cell approach, and is designed to inherently embody a number of RHBD techniques at the device-and layout-level to mitigate the radiation effects. We further design a test circuitry embodying several library cells based on the RHBD template for total ionizing dose (TID) irradiation testing. With the test circuitry, we show that our RHBD library cells experience insignificant delay effects at TID dosage up to 500Krad, V DD = 0.9V−1.4V. The irradiating tests provide concrete experimental data that verify the robustness of our proposed RHBD cell template and the ensuing design methodologies (including library development) for S&S electronics.

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Section: Rhbd Library Cell Templatementioning

confidence: 99%

Radiation-hardened library cell template and its total ionizing dose (TID) delay characterization in 65nm CMOS process

Chang

Chong

Shu

et al. 2014

2014 IEEE 57th International Midwest Symposium on Circuits and Systems (MWSCAS)

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“…Nowadays, VDMOS is often used under harsh environment such as space, where it suffers from cosmic radiation [1][2][3][4]. To operate normally in space environment, Si VDMOSs must be able to withstand ionizing radiation such as total ionizing dose (TID).…”

Section: Introductionmentioning

confidence: 99%

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO₂ and Si₃N₄/SiO₂ Gate Dielectrics

Zhao

Zhou

2017

Active and Passive Electronic Components

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The total ionizing dose irradiation effects are investigated in Si vertical diffused MOSFETs (VDMOSs) with different gate dielectrics including single SiO 2 layer and double Si 3 N 4 /SiO 2 layer. Radiation-induced holes trapping is greater for single SiO 2 layer than for double Si 3 N 4 /SiO 2 layer. Dielectric oxidation temperature dependent TID effects are also studied. Holes trapping induced negative threshold voltage shift is smaller for SiO 2 at lower oxidation temperature. Gate bias during irradiation leads to different TH shift for different gate dielectrics. Single SiO 2 layer shows the worst negative TH at = 0 V, while double Si 3 N 4 /SiO 2 shows negative TH shift at = −5 V, positive TH shift at = 10 V, and negligible TH shift at = 0 V.

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Total Ionizing Dose Testing of a RadHard-by-Design FET Driver in a 0.35¿m Triple-Well Process

Cited by 2 publications

References 2 publications

Radiation-hardened library cell template and its total ionizing dose (TID) delay characterization in 65nm CMOS process

Radiation-hardened library cell template and its total ionizing dose (TID) delay characterization in 65nm CMOS process

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO₂ and Si₃N₄/SiO₂ Gate Dielectrics

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Total Ionizing Dose Testing of a RadHard-by-Design FET Driver in a 0.35¿m Triple-Well Process

Cited by 2 publications

References 2 publications

Radiation-hardened library cell template and its total ionizing dose (TID) delay characterization in 65nm CMOS process

Radiation-hardened library cell template and its total ionizing dose (TID) delay characterization in 65nm CMOS process

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

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Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO₂ and Si₃N₄/SiO₂ Gate Dielectrics