Total Performance of 32-nm-Node Ultralow-$k$/Cu Dual-Damascene Interconnects Featuring Short-TAT Silylated Porous Silica $(k = \hbox{2.1})$

Oda, Noriaki; Chikaki, Shinichi; Kubota, Tadashi; Nakao, Shin-ichi; Tomioka, K.; Soda, E.; Nakamura, Norimasa; Gawase, A.; Nogawa, J.; Kawashima, Yoshiya; Hayashi, Ryota; Suzuki, Takamasa; Saito, Shuichi

doi:10.1109/ted.2010.2066568

Cited by 10 publications

(3 citation statements)

References 14 publications

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“…The measured via resistance is effectively reduced by introducing each PET process. To analyze via-open failure, the voltage-contrast method 17) and TEM cross-sectional observation were carried out for the non-PET sample, and a failed via and a typical good via, shown in Figs. 13(a) and 13(b), respectively, are compared.…”

Section: Resultsmentioning

confidence: 99%

“…The issues of concern in dual-damascene integration of porous SiOCHs are: (1) the degradation of interconnect characteristics caused by dry etching, ashing, and wet cleaning, [16][17][18][19][20][21][22] (2) the degradation of trench shape by the barrier/seed sputtering process, i.e., resputtering, 23,24) (3) residues at the bottom of the via holes owing to the formation of large amounts of by-products during the dryetching process that are too hard to remove by wet cleaning, [16][17][18][19][20][21][22] and ( 4) film delamination due to the fragile, porous, low-k structure. 1,2) To solve these problems, postetching treatments using H 2 , N 2 , and CH 4 have been studied for the metal hard mask trench-first dual-damascene (D/D) process using porous SiCOH.…”

Section: Introductionmentioning

confidence: 99%

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Effects of Postetching Treatment on Molecular-Pore-Stacking/Cu Interconnects for 28 nm Node and Beyond

Oshida¹,

Kume²,

Katsuyama³

et al. 2011

Jpn. J. Appl. Phys.

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We study the level spacing distribution p(s) in the spectrum of random networks. According to our numerical results, the shape of p(s) in the Erdős-Rényi (E-R) random graph is determined by the average degree k and p(s) undergoes a dramatic change when k is varied around the critical point of the percolation transition, k = 1. When k 1, the p(s) is described by the statistics of the Gaussian orthogonal ensemble (GOE), one of the major statistical ensembles in Random Matrix Theory, whereas at k = 1 it follows the Poisson level spacing distribution. Closely above the critical point, p(s) can be described in terms of an intermediate distribution between Poisson and the GOE, the Brodydistribution. Furthermore, below the critical point p(s) can be given with the help of the regularized Gamma-function. Motivated by these results, we analyse the behaviour of p(s) in real networks such as the internet, a word association network and a protein-protein interaction network as well. When the giant component of these networks is destroyed in a node deletion process simulating the networks subjected to intentional attack, their level spacing distribution undergoes a similar transition to that of the E-R graph.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effects of Postetching Treatment on Molecular-Pore-Stacking/Cu Interconnects for 28 nm Node and Beyond

Oshida¹,

Kume²,

Katsuyama³

et al. 2011

Jpn. J. Appl. Phys.

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“…Many works have reported on low-k materials. [2][3][4][5][6][7] However, the fine patterning and metal filling processes are the most important technologies.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of 70-nm-Pitch Two-Level Interconnects by using Extreme Ultraviolet Lithography

Nakamura¹,

Oda²,

Soda³

et al. 2011

Jpn. J. Appl. Phys.

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We investigate the emissions of atomic potassium excited by two photons near the 4S 1/2 -6S 1/2 transition. Radiation near the 6S 1/2 -4P 3/2,1/2 and 4P 3/2,1/2 -4S 1/2 transitions are studied for the unidirectional and the bidirectional cases, respectively. It is shown that the total output intensity increases considerably for the bidirectional propagation. This is attributed to the effective increase of the Doppler free excitation and the cancellation of the quantum interference effect that is associated with the multiple paths of excitation of certain states.

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Highly reliable molecular-pore-stacking (MPS)/Cu interconnects featuring best combination of post-etching treatment and resputtering processes

Oshida¹,

Kume²,

Katsuyama³

et al. 2014

Microelectronic Engineering

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Total Performance of 32-nm-Node Ultralow-$k$/Cu Dual-Damascene Interconnects Featuring Short-TAT Silylated Porous Silica $(k = \hbox{2.1})$

Cited by 10 publications

References 14 publications

Effects of Postetching Treatment on Molecular-Pore-Stacking/Cu Interconnects for 28 nm Node and Beyond

Effects of Postetching Treatment on Molecular-Pore-Stacking/Cu Interconnects for 28 nm Node and Beyond

Fabrication of 70-nm-Pitch Two-Level Interconnects by using Extreme Ultraviolet Lithography

Highly reliable molecular-pore-stacking (MPS)/Cu interconnects featuring best combination of post-etching treatment and resputtering processes

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