Total TCAD strategy for DFM in IC technology development

Walton, A.J.; Fallon, M.; Newsam, M. I.; Ferguson, R. S.; Sprevak, D.; Elliott, J. P.; Allan, G.A.

doi:10.1049/ip-smt:19970860

Cited by 10 publications

(3 citation statements)

References 2 publications

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“…The creation factory simulation models using FASTT3 enables issues such as cycle time and throughput to be considered during process development. These two elements provide much of the information 1 For further author information -email: V.K.Nilsen@ee.ed.ac.uk, WWW: http://www.ee.ed.ac.uk/-vkn, Fax. +44 131 650 6554 2 For further author information -email: A.J.Walton@ee.ed.ac.uk, WWW: http://www.ee.ed.ac.uk/STR, Fax.…”

Section: T2cad -Total Tcadmentioning

confidence: 99%

Automated cost of ownership analysis for process development

Nilsen

Walton

1999

SPIE Proceedings

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This paper describes how costings analysis can be incorporated into a framework for process development. It describes how Cost of Ownership (COO) can be calculated from the information stored within existing process development tools through the use of CASTT (Cost AnalysiS in Total TCAD). It provides a method by which manufacturing costs can be forecast and alternative processing options can be compared. The existing elements of Total TCAD framework are described, an outline of the CASTT software is then given and examples are used to illustrate its potential.

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Section: T2cad -Total Tcadmentioning

confidence: 99%

Automated cost of ownership analysis for process development

Nilsen

Walton

1999

SPIE Proceedings

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“…Technology computer aided design (TCAD) is computer aided design and engineering used in semiconductor fabrication process design and optimization [1][2][3][4]. TCAD includes detailed simulation of all fabrication process steps.…”

Section: Introductionmentioning

confidence: 99%

A three-dimensional photoresist etching simulator for TCAD

Karafyllidis

1999

Modelling Simul. Mater. Sci. Eng.

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Cellular Automata have been extensively used as a two-dimensional simulator of the photoresist etching process. This simulator has been verified experimentally for 248 nm photolithography. In this work the Cellular Automata simulator is extended in three dimensions in order to deal with problems arising in 193 nm photolithography and beyond. The three-dimensional simulator is tested using well known etch-rate distribution functions and its results are compared with experimental results found in the literature.

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“…Technology computer aided design (TCAD) is computer aided design and engineering used in semiconductor fabrication process design and manufacturing yield optimization [1][2][3][4]. TCAD includes detailed simulation of all fabrication process steps [5,6], and it is essential for the successful design of today's devices and integrated circuits because of their increasing complexity and the increasing cost and delay of experimental design iteration [7].…”

Section: Introductionmentioning

confidence: 99%

Simulation of deposition-topography granular distortion for TCAD

Karafyllidis

Georgoulas

Hagouel

et al. 1998

Modelling Simul. Mater. Sci. Eng.

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A new deposition simulator for technology computer aided design (TCAD) is presented in this paper. The solution, on a cellular automaton lattice, of the equations that describe the deposition process has enabled the proposed simulator to handle the complicated boundary and initial conditions imposed by granular defects. This simulator can provide scanning electron microscope (SEM)-like cross-sectional views that are in very good agreement with experimental and simulation results found in the literature, and it can also be used to perform numerical experiments. The effects of granule temperature, location, and size on the deposition profiles have been studied by performing numerical experiments using this simulator.

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Total TCAD strategy for DFM in IC technology development

Cited by 10 publications

References 2 publications

Automated cost of ownership analysis for process development

Automated cost of ownership analysis for process development

A three-dimensional photoresist etching simulator for TCAD

Simulation of deposition-topography granular distortion for TCAD

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