Toward a Better Understanding of the Effect of Cu Electroplating Process Parameters on Cu3Sn Voiding

Yin, Liang; Wafula, Fred; Dimitrov, Nikolay; Børgesen, Peter

doi:10.1007/s11664-011-1764-0

Cited by 40 publications

(28 citation statements)

References 37 publications

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“…Yin et al 10,11,21 also found a similar result. However, the void quantity was much higher in the present work.…”

Section: Resultsmentioning

confidence: 52%

“…However, the void quantity was much higher in the present work. Yin et al 11 found that voids were formed only at the Cu/Cu 3 Sn interface and aggregated to form a continuous gap along the interface upon annealing. In the present work, numerous voids were formed not only at the interface but also within the IMC layers, forming a complicated alternating layered structure as seen in Fig.…”

Section: Resultsmentioning

confidence: 99%

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Effects of Electroplating Additives on the Interfacial Reactions between Sn and Cu Electroplated Layers

Lee

et al. 2014

J. Electrochem. Soc.

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Three combinations of additives based on polyethylene glycol (PEG), Cl − ions, bis(3-sulfopropyl)disulfide (SPS), and Alcian Blue (ABPV) were used to fabricate the Cu plated layer. The additive combination was found to play an important role in the microstructural evolution of the Cu plated layer. The PC (PEG + Cl − ) case produced the Cu plated layer with grains of a smaller size and random morphology, while the PCS (PEG + Cl − + SPS) and PCSA (PEG + Cl − + SPS + ABPV) cases produced the Cu plated layers with grains of a larger size and faceted morphology. Experimental results based on metallurgical examination and trace element analysis indicated that the interfacial reactions between Sn and Cu plated layers strongly depended upon the additive combination used in the Cu plating solution, and the dependence was reasonably correlated with the grain morphology of the Cu plated layer combined with the incorporation of organic impurities.Cu is commonly used for conductors and metallizations in printed circuit board (PCB) and Si integrated-circuit (IC) chip due to its superior electrical conductivity and good wettability with solder materials. Sn is extensively used in microelectronic solders due to its suitable melting point, efficient mechanical property, and low cost. So, the Sn/Cu joints massively exist in the microelectronic products. To form a Sn/Cu joint, reflow is conducted during which the Sn melts and wets the Cu substrate. The intermetallic compounds (IMC) are usually formed as a result of the interfacial reaction between Sn and Cu. Related investigations have been extensively performed to provide helpful information for reliability evaluation of solder joints. [1][2][3][4][5][6][7] The Cu conductor and metallization on PCB and Si chip can be fabricated using various methods, among which electroplating is widely used due to economic consideration. Electroplating is an electrochemical process involving complicated interaction between various additives used in the Cu plating bath, such as suppressor, accelerator, and so on. These additives interacted with each other on the Cu surface and inevitably were partially incorporated into the Cu plated layer during electroplating. The incorporation of organic impurities in the Cu plated layers during plating was found to have significant effects on the interfacial reactions between Sn-based solder and Cu plated substrate. [8][9][10][11][12][13] The S residue of about 17 ppm was detected in the Cu plated layer when a high level (3 × 10 −5 M) of accelerator, SPS (bissodium sulfopropyldisulfide, C 6 H 12 O 6 S 4 Na 2 ), was added in the Cu plating bath. 8 Large amounts of void were formed at the Cu/Cu 3 Sn interface along with the solder/Cu interfacial reaction during 150 • C aging, which was attributed to the reduction of free energy barrier for void formation due to interfacial segregation of S. Voids were continuously formed during aging and merged into several gaps within the Cu-Sn IMCs, forming an alternating layered structure composed of gaps and IMCs at the Sn-3...

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“…Yin et al 10,11,21 also found a similar result. However, the void quantity was much higher in the present work.…”

Section: Resultsmentioning

confidence: 52%

Section: Resultsmentioning

confidence: 99%

Effects of Electroplating Additives on the Interfacial Reactions between Sn and Cu Electroplated Layers

Lee

et al. 2014

J. Electrochem. Soc.

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“…It is difficult from this work to confidently conclude that substrate orientation plays a role in void formation, rather one would expect the changes in the current density would play a much larger role in void formation. Yin et al 87 studied texturing of various typical suppressor-accelerator additive systems. A texture coefficient was used to measure the amount of texturing occurring in the samples with respect to the voiding propensity.…”

Section: Changes In the Microstructurementioning

confidence: 99%

The Role of Ultrafine Crystalline Behavior and Trace Impurities in Copper on Intermetallic Void Formation

Ross

Malmberg

Vuorinen

et al. 2018

ACS Appl. Electron. Mater.

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“…In case of Cu-solder reaction, many studies have reported that Cu plating conditions such as additives are related to microvoid formation at the CuCu 3 Sn interface, affecting the final solder joint reliability. [13][14][15][16][17] In case of Ni-solder reaction, it is reported that the Ni-P plating bath life affects the brittle fracture behavior of Sn-Ag-Cu solder joints. 18 However, few studies have investigated the effect of Ni-P plating conditions on solder joint properties.…”

Section: Introductionmentioning

confidence: 99%

Effect of Ni-P Plating Temperature on Growth of Interfacial Intermetallic Compound in Electroless Nickel Immersion Gold/Sn-Ag-Cu Solder Joints

Seo

Kim

et al. 2017

Journal of Elec Materi

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The growth of interfacial intermetallic compound and the brittle fracture behavior of Sn-3.0Ag-0.5-Cu solder (SAC305) joints on electroless nickel immersion gold (ENIG) surface finish have been investigated using Ni-P plating solution at temperatures from 75°C to 85°C and fixed pH of 4.5. SAC305 solder balls with diameter of 450 lm were mounted on the prepared ENIG-finished Cu pads and reflowed with peak temperature of 250°C. The interfacial intermetallic compound (IMC) thickness after reflow decreased with increasing Ni-P plating temperature. After 800 h of thermal aging, the IMC thickness of the sample prepared at 85°C was higher than for that prepared at 75°C. Scanning electron microscopy of the Ni-P surface after removal of the Au layer revealed a nodular structure on the Ni-P surface. The nodule size of the Ni-P decreased with increasing Ni-P plating temperature. The Cu content near the IMC layer increased to 0.6 wt.%, higher than the original Cu content of 0.5 wt.%, indicating that Cu diffused from the Cu pad to the solder ball through the Ni-P layer at a rate depending on the nodule size. The sample prepared at 75°C with thicker interfacial IMC showed greater high-speed shear strength than the sample prepared at 85°C. Brittle fracture increased with decreasing Ni-P plating temperature.

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Toward a Better Understanding of the Effect of Cu Electroplating Process Parameters on Cu3Sn Voiding

Cited by 40 publications

References 37 publications

Effects of Electroplating Additives on the Interfacial Reactions between Sn and Cu Electroplated Layers

Effects of Electroplating Additives on the Interfacial Reactions between Sn and Cu Electroplated Layers

The Role of Ultrafine Crystalline Behavior and Trace Impurities in Copper on Intermetallic Void Formation

Effect of Ni-P Plating Temperature on Growth of Interfacial Intermetallic Compound in Electroless Nickel Immersion Gold/Sn-Ag-Cu Solder Joints

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