Toward Long-Term Retention-Time Single-Electron-Memory Devices Based on Nitrided Nanocrystalline Silicon Dots

Huang, Shaoyun; Arai, Kenta; Usami, K.; Oda, Shunri

doi:10.1109/tnano.2004.824037

Cited by 42 publications

(29 citation statements)

References 18 publications

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“…Multiple memory nodes have been exampled to improve charge retention time with consuming negligible programming/erasing time [27,28].…”

Section: Emerging Nc-si Flash Memory Devicesmentioning

confidence: 99%

“…A multiple stacked floating gate was demonstrated by Zacharias et al [34]. Oda et al [28] demonstrated that surfacenitrided nc-Si dots could improve the charge retention time by three orders of magnitude, compared to the normal nc-Si. The nc-Si core provides the fast programming and the nitride film enables the long-term retention.…”

Section: Nc-si Memory Structuresmentioning

confidence: 99%

“…28 The channel current was monitored at V g ¼ 2 V as a function of waiting time immediately after the initial programming (10 V) or erasing (À4 V) voltage pulse (20 s). The quantized current change is observed due to discrete emissions or injections of electrons from/out of the SN-nc-Si dot.…”

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confidence: 99%

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Silicon Nanocrystal Flash Memory

Oda

Huang

2010

Silicon Nanocrystals

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“…Multiple memory nodes have been exampled to improve charge retention time with consuming negligible programming/erasing time [27,28].…”

Section: Emerging Nc-si Flash Memory Devicesmentioning

confidence: 99%

Section: Nc-si Memory Structuresmentioning

confidence: 99%

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Silicon Nanocrystal Flash Memory

Oda

Huang

2010

Silicon Nanocrystals

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“…However, in spite of the successful demonstrations of memory operations based on single-electron transports, the charge retention time of ncSi dot memory devices is too short for practical nonvolatile memory applications [10]. The improved retention time was demonstrated to be possible without any significant loss of programming speed based on the modifications of floating-gates by the dual memory nodes [11].…”

Section: Silicon Nanocrystal Dot Memorymentioning

confidence: 99%

“…Single-electron memory effects were studied using a short-channel MOSFET having Si quantum dots as a floating gate [9][10][11][12][13]. Storing of electrons in individual Si dots was evaluated by Kelvin probe force microscopy (KFM) [14].…”

Section: Introductionmentioning

confidence: 99%

Charge storage and electron/light emission properties of silicon nanocrystals

Oda

Huang

Salem

et al. 2007

Physica E: Low-dimensional Systems and Nanostructures

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Monodispersed silicon nanocrystals show novel electrical and optical characteristics of silicon quantum dots, such as single-electron tunneling, ballistic electron transport, visible photoluminescence and high-efficiency electron emission.Single-electron memory effects have been studied using a short-channel MOSFET incorporating Si quantum dots as a floating gate. Surface nitridation of Si nanocrystal memory nodes extends the charge-retention time significantly. Single-electron storage in individual Si dots has been evaluated by Kelvin probe force microscopy.Photoluminescence and electron emission are observed for surface-oxidized silicon nanocrystals. Efficiency of the no-phonon-assisted transition increases with decreasing core Si size. Electron emission efficiency as high as 5% has been achieved for the Si-nanocrystalbased cold electron emitter devices. The non-Maxwellian energy distribution of emitted electrons suggests that the mechanism of electron emission is due to ballistic transport through arrays of surface-oxidized Si nanocrystals. Combined with the ballistic electron emission, the quasi-direct light emission properties can be used for developing Si-based lasers. r

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Performance Enhancement of Electronic and Energy Devices via Block Copolymer Self‐Assembly

et al. 2015

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The use of self-assembled block copolymers (BCPs) for the fabrication of electronic and energy devices has received a tremendous amount of attention as a non-traditional approach to patterning integrated circuit elements at nanometer dimensions and densities inaccessible to traditional lithography techniques. The exquisite control over the dimensional features of the self-assembled nanostructures (i.e., shape, size, and periodicity) is one of the most attractive properties of BCP self-assembly. Harmonic spatial arrangement of the self-assembled nanoelements at desired positions on the chip may offer a new strategy for the fabrication of electronic and energy devices. Several recent reports show the great promise in using BCP self-assembly for practical applications of electronic and energy devices, leading to substantial enhancements of the device performance. Recent progress is summarized here, with regard to the performance enhancements of non-volatile memory, electrical sensor, and energy devices enabled by directed BCP self-assembly.

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Toward Long-Term Retention-Time Single-Electron-Memory Devices Based on Nitrided Nanocrystalline Silicon Dots

Cited by 42 publications

References 18 publications

Silicon Nanocrystal Flash Memory

Silicon Nanocrystal Flash Memory

Charge storage and electron/light emission properties of silicon nanocrystals

Performance Enhancement of Electronic and Energy Devices via Block Copolymer Self‐Assembly

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