Toward Low‐Power Cryogenic Metal‐Oxide Semiconductor Field‐Effect Transistors

Abstract

Herein, cryogenic field‐effect transistors (FETs) are discussed. In particular, the saturation of the subthreshold swing due to band tailing is studied. It is shown with simulations and experiments that engineering of the oxide‐channel interfaces and a strong increase of the gate oxide capacitance are effective in improving the switching behavior of the device. The implication of scaling the oxide capacitance on the power consumption of cryogenic devices is investigated, too. Furthermore, an alternative for conventional doping in cryogenic transistors is discussed. Based on synchrotron X‐Ray absorption spectroscopy at total fluorescence (XAS‐TFY) and ultraviolet photoemission spectroscopy (UPS) measurements, it is shown experimentally that in true nanoscale devices, a simple SiO 2 $\left(\text{SiO}\right)_{2}$ coating yields a shift of the conduction band that is equivalent to a very high dopant concentration. As a result, nanoscale cryogenic steep slope FETs with strongly improved electrical characteristics become feasible.