Toward the real threshold of the megajoule laser components

Fornier, Anne; Cordillot, C.; Bernardino, D.; Pinot, B.; Geenen, Bernard; Leplan, H.; Alexandre, W.

doi:10.1117/12.307002

Cited by 3 publications

(1 citation statement)

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“…They provide a basic measure of damage size and extent based on variations in optical reflectance. However, for characterization of the full three-dimensional, topographic nature of the damage site tools such as atomic force microscopy (AFM), scanning electron microscopy (SEM), and optical interferometry techniques need to be used [1,2].…”

Section: Introductionmentioning

confidence: 99%

Interferometric assessment of laser-induced damage to semiconductors

Blackshire

Zakel

Guha

2003

Laser-Induced Damage in Optical Materials: 2002 and 7th International Workshop on Laser Beam and Optics Characterization

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It is important to determine the onset of damage as well as the extent of the damage area when materials are illuminated by intense laser radiation. In this work, an optical interferometric technique was used to assess laser-induced damage in semiconductor materials based on the three-dimensional, topographic characteristics of the damage site. Both antireflection coated and uncoated materials were evaluated for variations of fluence level, focused spot size, and laser repetition rate. The interferometric technique was non-contact and nondestructive in nature, providing a high-resolution capability of assessing damage levels on the surfaces of the materials.

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Section: Introductionmentioning

confidence: 99%

Interferometric assessment of laser-induced damage to semiconductors

Blackshire

Zakel

Guha

2003

Laser-Induced Damage in Optical Materials: 2002 and 7th International Workshop on Laser Beam and Optics Characterization

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Laser megajoule 1.06-μm mirror production with very high laser damage threshold

Pinot¹,

Leplan²,

Houbre³

et al. 2002

SPIE Proceedings

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As part ofthe LMJ (Laser Megajoule) program, CEA is building the LIL laser with full size optics and LMJ requirements. SAGEM has been selected as the supplier of large optical components and coatings with very high laser-induced damage threshold. Including spare parts, about 100 mirrors 610*430 mm2 with LIDT-3ns > 25 J/cm2 have to be produced. Using a 5 m3 vacuum chamber and the << 100 J/cm2 >> mirror coating process developed at CEA-LETI, with Hafnium and Si02 materials, we are now typically in a serial production phase. To date, about thirty mirrors have been delivered. This paper focuses on the acceptance tests performed after coating, at Sagem then CEA:. LIDT measurement and Raster-Scan on samples . Reflectance mapping on CEA automatic photometer . Reflected wavefront deformation with 0 800 mm /1o CEA interferometer

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Improvement in Laser-Induced Damage Threshold of Antireflection Coatings for High-Power UV Lasers by Removing Subsurface of Large lenses

Otani¹,

Fujimura²,

Ishikura³

et al. 2004

Jpn. J. Appl. Phys.

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We improved the laser-induced damage threshold (LIDT) of antireflection coatings for a wavelength of 355 nm by removing the subsurface of the substrate with an ion beam etching system. The ion beam etching system is set up in a coating chamber to etch 1000 mm optics uniformly. The antireflection coating composed of MgF2, Al2O3 and SiO2 layers has an excellent LIDT of 9.2 J/cm2 which is the highest reported LIDT in the world (355 nm, 0.3 ns pulsed laser).

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Toward the real threshold of the megajoule laser components

Cited by 3 publications

References 0 publications

Interferometric assessment of laser-induced damage to semiconductors

Interferometric assessment of laser-induced damage to semiconductors

Laser megajoule 1.06-μm mirror production with very high laser damage threshold

Improvement in Laser-Induced Damage Threshold of Antireflection Coatings for High-Power UV Lasers by Removing Subsurface of Large lenses

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