“…First introduced for the purposes of investigating microplasmas in p-n junctions under avalanche conditions , the diffused guard ring is a lower doped, deeper implant at the device periphery able to reduce the local electric field strength. This construction has since been implemented by several research groups (Cova et al, 1981;Kindt, 1994;Rochas et al, 2002;Niclass et al, 2007). Whilst enabling a low breakdown voltage using implants that are commonly available in most CMOS processes, this structure has several limitations.…”