2018 IEEE/MTT-S International Microwave Symposium - IMS 2018
DOI: 10.1109/mwsym.2018.8439369
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Towards Ultra-Low-Voltage and Ultra-Low-Power Discrete-Time Receivers for Internet-of-Things

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Cited by 6 publications
(13 citation statements)
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“…Compared with the DT-RX in [1], the power budget reduces nearly 50% due to the single-path architecture. Reference [20] operates at 0.275 V via an external voltage doubler and achieves 1-mW power consumption but with a 7-dB degradation of FoM compared with our work. Reference [7] has better selectivity due to an enhanced dynamic range of DPLL-based ADC by means of a feedback DAC.…”
Section: Resultsmentioning
confidence: 78%
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“…Compared with the DT-RX in [1], the power budget reduces nearly 50% due to the single-path architecture. Reference [20] operates at 0.275 V via an external voltage doubler and achieves 1-mW power consumption but with a 7-dB degradation of FoM compared with our work. Reference [7] has better selectivity due to an enhanced dynamic range of DPLL-based ADC by means of a feedback DAC.…”
Section: Resultsmentioning
confidence: 78%
“…An ADPLL in [19] runs its DCO at 0.23 V and a doubler at 0.35 V to power the voltage-sensitive TDC. Reference [20] demonstrates a DT-RX directly supplied at 0.275 V via an sw-cap-based voltage doubler. In this work, the RF front end is optimized at 0.3 V and a DCO at 0.25 V. A 0.7-V supply is applied to mixed-signal circuits.…”
Section: Circuit Implementationmentioning
confidence: 99%
“…Finally, in [10] a new class discrete receiver is realized. It is based in a discrete-time superheterodyne architecture and designed aiming a decrease in circuits' supply voltage proportional to technology node decrease.…”
Section: A Pgamentioning
confidence: 99%
“…A smaller power dissipation, at the transmitter part, is obtained by using all-digital circuits (KUO et al, 2017;LIU et al, 2015) or operating at the ultra-low voltage range (ULV) (YIN et al, 2018). On the other hand, at the receiver (RX) part, the smaller power dissipation is obtained using modern Low-IF and Zero-IF architectures, operating with low voltage supply (ZHANG; MIYAHARA; OTIS, 2013; YI BRYANT;SJOLAND, 2014;SELVAKUMAR;LISCIDINI, 2015;DING et al, 2018;KUO et al, 2018), or by reducing the number of RF active blocks (MASUCH; DELGADO-RESTITUTO, 2013a; BRYANT; SJOLAND, 2014). The digital-intensive circuits transceivers should be implemented in advanced CMOS process (≤ 40 nm) in order to obtain faster switches and lower parasitic capacitances (KUO et al, 2018).…”
Section: Introductionmentioning
confidence: 99%
“…On the other hand, at the receiver (RX) part, the smaller power dissipation is obtained using modern Low-IF and Zero-IF architectures, operating with low voltage supply (ZHANG; MIYAHARA; OTIS, 2013; YI BRYANT;SJOLAND, 2014;SELVAKUMAR;LISCIDINI, 2015;DING et al, 2018;KUO et al, 2018), or by reducing the number of RF active blocks (MASUCH; DELGADO-RESTITUTO, 2013a; BRYANT; SJOLAND, 2014). The digital-intensive circuits transceivers should be implemented in advanced CMOS process (≤ 40 nm) in order to obtain faster switches and lower parasitic capacitances (KUO et al, 2018). Otherwise, the strategies based on cutting some active-RF hardware and reducing the operation voltage can also be implemented in low-cost sub-micron CMOS processes.…”
Section: Introductionmentioning
confidence: 99%