Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC)

Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates

“…In wide band gap semiconductors, the thermionic Field Emission theory has been often used to explain the reverse J-V characteristic in Schottky Diodes [27,28,29]. The experimental J-V curves (at 25, 75 and 125°C) are reported together with those calculated using the thermionic field emission model (TFE) [30].…”

Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices

“…The cubic polytype of silicon carbide (3C-SiC) has a smaller energy gap (E g = 2.36 eV) [ 1 , 2 ] compared to the hexagonal 4H-SiC (E g = 3.26 eV) [ 3 ], but it possesses a higher electron mobility and saturation velocity [ 4 , 5 , 6 , 7 , 8 ]. Moreover, it exhibits a larger conduction band offset (3.7 eV) [ 9 ] with SiO 2 than 4H-SiC (2.7 eV).…”

“…Hence, differently from the 4H-SiC/SiO 2 system where they are aligned with the conduction band edge of 4H-SiC, the near-interface-oxide-traps (NIOTs) inside the insulator in the 3C-SiC/SiO 2 system lie above the Fermi level and hence they are electrically inactive [ 10 , 11 ]. Furthermore, the lower position of the 3C-SiC conduction band edge with respect to the SiO 2 conduction band edge results immune to the interface states that are peculiar of the SiO 2 /4H-SiC interface [ 6 ]. This can lead to a higher inversion electron channel mobility (>200 cm 2 V −1 s −1 [ 12 ]) in 3C-SiC Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) compared to those fabricated using the 4H-poly-type.…”