Transient analysis of Si-MOS and SiC-JFET cascode power switches

Transient Switching Behavior in Silicon MOSFET RF Switches

“…The ability to control the switch state has a direct bearing on such high speed requirement applications such as environmental sensing where echoes may occur from objects within a few meters of the sensor, or in systems where band switch agility is paramount. impact this circuit has on the use of the MOSFET as an amplifier [8][9], with small devices driving capacitive loads such as that seen on-chip [10][11] or in high power, low frequency applications [12]. To the authors' knowledge, this is one of the first investigations into the RF transient effects of the distributed RC gate and external gate resistance on the turn-on and turn-off transient behavior in MOSFET RF switches.…”

A 1200-V GaN/SiC cascode device with E-mode p-GaN gate HEMT and D-mode SiC junction field-effect transistor

“…[4][5][6] The cascode structure device not only enables normally-off operation, but also offers the advantage of the mitigated miller effect, leading to improved switching speed and reduced switching losses. [7][8][9] For the current commercially available products using a cascode structure, an LV E-mode Si MOSFET is typically used to connect in series to control the ON/OFF state of HV D-mode SiC/GaN device. However, the LV Si MOSFETs still have relatively limited switching performance, and would seriously limit the high temperature operation of the cascode device, since Si MOSFETs would become very leaky and could not operate properly above 200 °C due to Si's narrow bandgap.…”