Transient annealing in semiconductor devices following pulsed neutron irradiation

Recombination statistics for the neutron-induced base current component

“…The activation energy, ER' has been studied by several investigators, and the values determined [23][24][25][26][27] were in good agreement with that presented here. The current-…”

“…Pr (5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22)(23)(24) 2. when b = 1, it yields 4(VT-VBE 2 sinh ' 2kT…”

Review of displacement damage effects in silicon devices

“…Sander evidently made the first detailed report of short-term annealing in silicon devices [65]. Sander and his colleague Gregory subsequently performed significant experiments and analyses on that subject, which are documented in several key publications [66]- [69]. That outstanding body of work by Gregory and Sander constitutes the foundation of our understanding of short-term annealing phenomena in irradiated silicon devices.…”

“…Several material and device properties have been measured as a function of time in short-term annealing studies, including minority-carrier lifetime in bulk material [73], [74], [78], [81], [83], conductivity in bulk material [64], [78], diffusion length in solar cells [66]- [68], [75], [82], current gain in bipolar transistors [63], [65], [66], [68], [71], [79], [80], [82], [87], forward voltage drop in diodes [68], [72], junction capacitance in diodes [70], propagation delay time in logic circuits [69], circuit gain in power inverter circuits [69], and dark current [84], [85] and charge transfer inefficiency [85] in CCDs. Various pulsed radiation sources that provided several types of particles were used in those short-term annealing studies, including fission neutrons [63]- [71], [73], [79], [80], [82]- [85], 14-MeV neutrons [73], [82], [83], 1.4-MeV electrons [66], [68], [74], 10-MeV electrons [72], and 30-MeV electrons [78]. In addition t...…”

NUCLEAR RADIATION EFFECTS ON SILICON p-n JUNCTIONS. Technical Progress Report.

“…Dominant activation energies of 0.19 + 0.04eV and 0.86 1 0•15eV in the bulk space-charge 33 region, and 0.34 + 0.06eV and 0.98 + 0.18eV in the neutral base region were calculated from the isochronal and isothermal annealing data. The experimental activation energies[34][35][36][37]…”