Transient behaviors of ZnO thin films on a transparent, flexible polyethylene terephthalate substrate

Kim, Yong Jun; Lee, Ho Seok; Noh, Jin−Seo

doi:10.1016/j.tsf.2016.02.012

Cited by 10 publications

(5 citation statements)

References 25 publications

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“…Furthermore, it has good stability and long durability and is inexpensive and highly abundant (Katwal, Paulose, Rusakova, Martinez, & Varghese, ). These characteristics enable ZnO to have several applications in diverse fields, such as in solar cells, gas sensors, piezoelectric transducers, light‐emitting diodes, and transparent conductors (Banerjee et al, ; Carcia, McLean, Reilly, & Nunes, ; Chin, Chao, & Wu, ; Kanmani & Rhim, ; Kim, Lee, & Noh, ; Sirelkhatim et al, ; Umetsu et al, ; Valerini et al, ; Yang et al, ; Yousef & Danial, ). Due to their antimicrobial and UV protection properties, ZnO and nanoparticle ZnO have been use as antimicrobial agents in food packaging or in biomedical applications, in antiseptic ointments, and for protection against sunburns, for example.…”

Section: Discussionmentioning

confidence: 99%

“…Several studies using different ZnO deposition methods on polymers have been reported, such as pulsed laser deposition, spray pyrolysis, DC, or radio frequency magnetron sputtering, sol–gel processes or chemical vapor deposition, but these were often inefficient, usually requiring long‐time periods or large amount of power, resulting in thick films with poor surface uniformity. Also, to obtain regularly structured ZnO at RT conditions is a challenge (Andrade & Miki‐Yoshida, ; Chin et al, ; Guo, Ji, Xu, Simon, & Wu, ; Kim et al, ). In the present work, and in opposition with previous works in the field, ZnO thin films were synthesized on PET substrates by DC magnetron sputtering, using low power and in a short period of time, and at RT, being, in this way, compatible with the polymeric subtract, resulting in good quality thin films.…”

Section: Discussionmentioning

confidence: 99%

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Development and characterization of ZnO piezoelectric thin films on polymeric substrates for tissue repair

Costa

Peixoto

Ferreira

et al. 2019

J Biomedical Materials Res

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Currently available scaffolds for tissue repair have shown very limited success, so many efforts have being put in the development of novel functional materials capable of regulating cell behavior and enhance the tissue healing rate. Piezoelectric materials, as zinc oxide (ZnO), can be a very interesting solution for scaffold development, as they can deliver electrical signals to cells upon mechanical solicitation, allowing the development of suitable microenvironments for tissue repair. This way, it is reported the deposition of ZnO thin films on a polymer by direct current magnetron sputtering, under different conditions, in order to obtain a piezoelectric ZnO thin film with potential for tissue repair applications. The obtained ZnO thin films were characterized in terms of morphology, crystallography, electrical conductivity, transmittance, piezoelectricity, and adhesion quality. The deposition process resulted in uniform films, with a very good adhesion to the substrate. The different deposition conditions influenced the evolution of the crystalline domains and preferential growths and consequently, the electrical properties of the films. One of the conditions resulted in a thin film with a high piezoelectric coefficient and a conductor behavior, being considered the most promising to act as a bioactive coating. K E Y W O R D S magnetron sputtering, PET, piezoelectricity, tissue repair, ZnO

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Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Development and characterization of ZnO piezoelectric thin films on polymeric substrates for tissue repair

Costa

Peixoto

Ferreira

et al. 2019

J Biomedical Materials Res

View full text Add to dashboard Cite

show abstract

“…Several applications, such as acoustic wave devices, light-emitting diodes, piezoelectric transducers, solar cell windows, transparent conductors, sensors, biosensors, gas-sensors, and thin lm transistors, of ZnO NPs have been investigated. 1 A signicant amount of research has been devoted to the development of various ZnO nanostructures, such as belts, combs, bers, particles, ribbons, rods, sheets, spheres, tubes, and wires. 2 Meanwhile, various oxides of vanadium occur as VO, VO 2 , V 2 O 3 , and V 2 O 5 depending on the oxidation state of vanadium (V 2+ to V 5+ ).…”

Section: Introductionmentioning

confidence: 99%

d-Glucose sensor based on ZnO·V₂O₅ NRs by an enzyme-free electrochemical approach

2019

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“…[16] If the device thickness can be reduced, the transmittance in the wavelength range of the visible spectrum may be improved, [17] and applications using flexible substrates could be facilitated. [17][18][19] Therefore, maintaining device performance while reducing device thickness is an important development direction.…”

Section: Introductionmentioning

confidence: 99%

High mobility ultrathin ZnO p–n homojunction modulated by Zn _0.85 Mg _0.15 O quantum barriers

Yang

Fang

et al. 2018

Chinese Phys. B

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The adding of ZnMgO asymmetric double barriers (ADB) in p-ZnO: (Li, N)/n-ZnO homojunction affects the p-n junction device performance prominently. Two different homojunctions are fabricated on Si (100) substrates by pulsed laser deposition; one is the traditional p-ZnO: (Li, N)/n-ZnO homojunction with different thicknesses named as S 1 (250 nm) and S 2 (500 nm), the other is the one with ADB embedded in the n-layer named as Q (265 nm). From the photoluminescence spectra, defect luminescence present in the S-series devices is effectively limited in the Q device. The current-voltage curve of the Q device shows Zener-diode rectification property because the two-dimensional electron gas tunnels through the narrow ZnMgO barrier under a reverse bias, thus decreasing the working p-n homojunction thickness from 500 nm to 265 nm. The ADB-modified homojunction shows higher carrier mobility in the Q device. The electroluminescence of the ZnO homojunction is improved in Q compared to S 2 , because the holes in p-type ZnO (Li, N) can cross the wide ZnMgO barrier under a forward bias voltage into the ZnO quantum well. Therefore, electron-hole recombination occurs in the narrow bandgap of n-type ZnO, creating an ultraviolet light-emitting diode using the ZnO homojunction.

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Transient behaviors of ZnO thin films on a transparent, flexible polyethylene terephthalate substrate

Cited by 10 publications

References 25 publications

Development and characterization of ZnO piezoelectric thin films on polymeric substrates for tissue repair

Development and characterization of ZnO piezoelectric thin films on polymeric substrates for tissue repair

d-Glucose sensor based on ZnO·V₂O₅ NRs by an enzyme-free electrochemical approach

High mobility ultrathin ZnO p–n homojunction modulated by Zn _0.85 Mg _0.15 O quantum barriers

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Transient behaviors of ZnO thin films on a transparent, flexible polyethylene terephthalate substrate

Cited by 10 publications

References 25 publications

Development and characterization of ZnO piezoelectric thin films on polymeric substrates for tissue repair

Development and characterization of ZnO piezoelectric thin films on polymeric substrates for tissue repair

d-Glucose sensor based on ZnO·V2O5 NRs by an enzyme-free electrochemical approach

High mobility ultrathin ZnO p–n homojunction modulated by Zn 0.85 Mg 0.15 O quantum barriers

Contact Info

Product

Resources

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d-Glucose sensor based on ZnO·V₂O₅ NRs by an enzyme-free electrochemical approach

High mobility ultrathin ZnO p–n homojunction modulated by Zn _0.85 Mg _0.15 O quantum barriers