Transient diffusion of boron implanted in SI along random and channeling directions

Chu, W. K.; Numan, Muhammad; Zhang, J.Z.; Sandhu, Gurtej; Michel, A. E.

doi:10.1016/0168-583x(89)90205-x

Cited by 14 publications

(4 citation statements)

References 12 publications

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“…However, the B results below 850~ are surprising. From this and previous studies of transient B diffusion, the following is known: C,.h is independent of: random vs. channeled implant direction and thus, generated point defect concentration (21); B or BF2 implant species, amorphous or nonamorphous layer formation; B implant dose and energy above 5 keV (21); annealing ambient and time; and shallow, postamorphization Si implants (22). Enhanced B diffusion in the tail region: 0.6 eV activation energy (19,26); and B is electrically active in the tail (21).…”

Section: Discussionmentioning

confidence: 63%

“…From this and previous studies of transient B diffusion, the following is known: C,.h is independent of: random vs. channeled implant direction and thus, generated point defect concentration (21); B or BF2 implant species, amorphous or nonamorphous layer formation; B implant dose and energy above 5 keV (21); annealing ambient and time; and shallow, postamorphization Si implants (22). Enhanced B diffusion in the tail region: 0.6 eV activation energy (19,26); and B is electrically active in the tail (21). These observations suggest that C~,h is related to intrinsic properties of the Si, and that external generation of point defects (as opposed to thermally-assisted processes) cause enhanced B diffusion at low temperatures which allows Cenh to be observed and measured.…”

Section: Discussionmentioning

confidence: 63%

“…2 and 3 and are plotted vs. inverse temperature of annealing. Data from this study were combined with C~n~ values obtained from published profiles from other studies of transient-enhanced diffusion (13,18,19,(21)(22)(23). The error bars indicate the spread .in values obtained with the average values noted.…”

Section: Resultsmentioning

confidence: 99%

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Point Defect Charge‐State Effects on Transient Diffusion of Dopants in Si

Fair

1990

J. Electrochem. Soc.

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Ion implantation damage produces point defects during annealing which can significantly enhance dopant diffusion. This diffusion at low temperatures was studied for P, As, and B implants in St. Enhanced diffusion was observed below certain doping concentrations which depend only on temperature. For As this concentration corresponds to As solid solubility. For P, enhanced diffusion occurs below the well-known kink concentration. For B, diffusion occurs below n~ for temperatures below 850~ A model is presented which correlates the self-interstitial donor level position, EI +, in the Si bandgap with the dominance of B diffusion via neutral self-interstitials. It is shown that when self-interstitials are extremely generated, the resulting changes in the free energy of self-interstitial formation force the B diffusion via I ~ to be 10-100 times greater than B diffusion via I § This results in significant enhanced diffusion of B in intrinsic Si relative to B layers doped above n, At temperatures at or above 850~ thermally-assisted, concentration-dependent diffusion via I + begins to dominate over enhanced diffusion which occurs with an ever decreasing time constant.

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Section: Discussionmentioning

confidence: 63%

Section: Discussionmentioning

confidence: 63%

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Point Defect Charge‐State Effects on Transient Diffusion of Dopants in Si

Fair

1990

J. Electrochem. Soc.

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“…The concentration at which enhanced tail diffusion begins, Co nh was determined by extrapolal ing lines from the down-side of the peak and the shoulder of the tail region, and noting where the intersection occurs.The results of detennining Con h for B, PandAs are shown inFigs.2 and 3. and are ploned versus inverse temperature of annealing. Data from this study were combined with C,nh values obtained from published profiles from other studies of transient-enhanced diffusion(13,(14)(15)(16)(17)(18).…”

mentioning

confidence: 99%

Shallow junctions-modeling the dominance of point defect charge states during transient diffusion

Fair

International Technical Digest on Electron Devices Meeting

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Ion implantation damage produces point defects during annealing which can significantly enhance dopant diffusion. This diffusion at low temperatures was studied for P , As , and B implants in Si. Enhanced diffusion was observed below cenain doping concentrations which depend only on temperature. For As this concentration corresponds to As solid solubility. For P , enhanced diffusion occurs below the well-known kink concentration. For B , diffusion OCC Ulli below n· for temperatures below 850'C. A model is presented which correlates the self-interstitial donor level position, E/, in the Si bandgap with the dominance of B diffusion via neutral self-interstitial,. It is shown that when self-interstitials are externall y generated tbe resulting changes in the free energy of self interstitial formation force the B diffusio n via r to be 10-100 times greater than B diffusion via [+.

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