Transient Response to High Energy Heavy Ions in 6H-SiC n⁺p Diodes

Abstract

Transient currents in 6H-SiC n+p diodes and those in Si PIN diodes are compared, and the carrier dynamic response to a heavy ion collision is analyzed using Technology Computer Aided Design (TCAD). In case of 6H-SiC n+p diodes, it is found that the contribution of the ambipolar-diffusion current to total transient current is extremely weak compared to that in Si PIN diodes, since plasma disruption is accelerated by the Auger recombination process in the former.

Charge Collection Properties of 6H-SiC Diodes by Wide Variety of Charged Particles up to Several Hundreds MeV

“…These results are interpreted in terms of the "Pulse Height Defect (PHD)" [7,8]. PHD is the sum of the following components: (1) the energy lost in the insensitive layer (electrode and p + region) of the detector, (2) the energy lost to nuclear scattering (non-ionization), (3) the recombination before generated carriers are completely collected.…”

“…In a previous study we discussed the carrier dynamics in 6H-SiC n + p diodes after a high energy heavy ion strikes, from the point of view of SEE [8]. The transient currents were measured by the Transient Ion Beam Induced Current (TIBIC) system.…”

“…To design SiC devices immune to SEEs for space use, clarifying the mechanism of SEEs is one of the most important issues. Therefore, we have performed time-domain analysis of transient current induced in SiC diodes by an ion strike [7,8]. The results obtained in previous studies suggest that the SiC diodes are directly applicable to a high energy ion detector.…”

Radiation Response of Silicon Carbide Diodes and Transistors

“…On the other hand, from the point of view of SEEs, study of ion irradiation on electronic devices using heavy ions is important. In this section, charge induced in SiC diodes by heavy ion incidence is reviewed on the basis of our previous studies [35][36][37][38][39][40]. In order to obtain the information on charge induced in electronic devices, Ion Beam Induced Charge (IBIC) measurements is thought to be one of the useful methods.…”