Transient simulation of AlGaN/GaN HEMT including trapping and thermal effects

Zhou, Xingye; Feng, Zhihong; Wang, Yuangang; Gu, Guodong; Song, Xubo; Cai, Shujun

doi:10.1109/icsict.2014.7021396

Cited by 7 publications

(6 citation statements)

References 14 publications

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“…GaN simulations are sensitive to the level of assumed interface charge. This fixed charge (σ) at the AlGaN/GaN interface is typically in the range of (0.5-1.3) × 10 13 cm −2 from previous TCAD studies [32,[35][36][37]. We calibrated this fixed trap charge (σ) to be 8 × 10 12 cm −2 and 1 × 10 13 cm −2 for the GIT and HD-GIT, respectively.…”

Section: Tcad Simulation Setup and Calibrationmentioning

confidence: 99%

Investigation of the forward gate leakage current in pGaN/AlGaN/GaN HEMTs through TCAD simulations

Sarkar

2024

Semicond. Sci. Technol.

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In this study, we examined the gate leakage characteristics of normally off pGaN/AlGaN/GaN HEMTs through a simulation study. The Fowler Nordheim Tunneling (FNT) mechanism mainly contributes to the gate leakage process as indicated by the TCAD simulation. However, at low bias, the FNT undercalculates the leakage current since the electric field is low in this region. This extra leakage current component at this low bias region can be attributed to the presence of surface traps. Trap-assisted tunneling current along with the FNT current can explain forward leakage characteristics of the pGaN HEMTs. Our TCAD simulations were matched with the experimental data for five devices from four different research groups to support this claim. Using TCAD simulations, we have been able to analyze several device parameters including the various potential drops inside the gate stack structure. We were able to identify some of the trap levels and compare them to the dominant defects expected to be present in the pGaN cap layer. Furthermore, we studied the effects of different device parameters on the gate leakage process in the pGaN HEMT.

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Section: Tcad Simulation Setup and Calibrationmentioning

confidence: 99%

Investigation of the forward gate leakage current in pGaN/AlGaN/GaN HEMTs through TCAD simulations

Sarkar

2024

Semicond. Sci. Technol.

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“…All the traps considered are located 0.4/0.5 eV from the conduction band, according to Refs. [35][36][37][38][39]. Figure 3a shows the energy band diagram and electron density distribution at 300 K for the designed structure in TCAD simulation.…”

Section: Structures and Parameter Settingmentioning

confidence: 99%

Degradation Prediction of GaN HEMTs under Hot-Electron Stress Based on ML-TCAD Approach

et al. 2022

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In this paper, a novel approach that combines technology computer-aided design (TCAD) simulation and machine learning (ML) techniques is demonstrated to assist the analysis of the performance degradation of GaN HEMTs under hot-electron stress. TCAD is used to simulate the statistical effect of hot-electron-induced, electrically active defects on device performance, while the artificial neural network (ANN) algorithm is tested for reproducing the simulation results. The results show that the ML-TCAD approach can not only rapidly obtain the performance degradation of GaN HEMTs, but can accurately predict the progressive failure under the work conditions with a mean squared error (MSE) of 0.2, informing the possibility of quantitative failure data analysis and rapid defect extraction via the ML-TCAD approach.

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“…However, some tremendous obstacles must be overcome to improve the performance of these devices further, such as the radio frequency (RF) drain current collapse and other reliability problems [2,3] . The parasitic effects are considered to be mainly caused by the trapping centers due to the defects or impurities in the device materials, and a lot of energy and efforts have been devoted into the trapping phenomena research [4][5][6][7][8][9][10][11][12][13][14][15][16][17] . By carrying out the turn-on pulse transient tests or simulation, the surface, interface or bulk traps have been investigated, respectively [3][4][5][6][7][8][9][10] .…”

Section: Introductionmentioning

confidence: 99%

Coeffect of trapping behaviors on the performance of GaN-based devices

et al. 2018

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Trap-induced current collapse has become one of the critical issues hindering the improvement of GaN-based microwave power devices. It is difficult to study the behavior of each trapping effect separately with the experimental measurement. Transient simulation is a useful technique for analyzing the mechanism of current collapse. In this paper, the coeffect of surface- and bulk-trapping behaviors on the performance of AlGaN/GaN HEMTs is investigated based on the two-dimensional (2D) transient simulation. In addition, the mechanism of trapping effects is analyzed from the aspect of device physics. Two simulation models with different types of traps are used for comparison, and the simulated results reproduced the experimental measured data. It is found that the final steady-state current decreases when both the surface and bulk traps are taken into account in the model. However, contrary to the expectation, the total current collapse is dramatically reduced (e.g. from 18% to 4% for the 90 nm gate-length device). The results suggest that the surface-related current collapse of GaN-based HEMTs may be mitigated in some degree due to the participation of bulk traps with short time constant. The work in this paper will be helpful for further optimization design of material and device structures.

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Transient simulation of AlGaN/GaN HEMT including trapping and thermal effects

Cited by 7 publications

References 14 publications

Investigation of the forward gate leakage current in pGaN/AlGaN/GaN HEMTs through TCAD simulations

Investigation of the forward gate leakage current in pGaN/AlGaN/GaN HEMTs through TCAD simulations

Degradation Prediction of GaN HEMTs under Hot-Electron Stress Based on ML-TCAD Approach

Coeffect of trapping behaviors on the performance of GaN-based devices

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