Transient voltage overshoots of high voltage ESD protections based on bipolar transistors in smart power technology

Delmas, Antoine; Gendron, Amaury; Bafleur, Marise; Nolhier, Nicolas; Gill, Chai

doi:10.1109/bipol.2010.5667967

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Cited by 7 publications

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“…The numerical calculation exhibits a better convergence and a great computational time speed-up. The major drawback of this method is a possible overvoltage during device triggering that could not be detected [5]. But generally this behavior is more critical with complex ESD protection as self-biased bipolar transistor or SRC, not in diode devices.…”

Section: Did Variationmentioning

confidence: 97%

Reliability of ESD protection devices designed in a 3D technology

Courivaud

Nolhier

Ferru³

et al. 2014

Microelectronics Reliability

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International audienceA 3D technology is used to design ESD protection devices. These planar bidirectional components, based on back-to-back diodes, are dedicated to first stage, external ESD protection. The main feature consists in using deep micro-holes, usually dedicated to the manufacturing of high-value capacitors, to design 3D diode. These devices present an unexpected behaviour when they are submitted to cumulative ESD stress. Finally, we propose an optimized configuration based on deep trenches that improves cumulative ESD stress robustness

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Section: Did Variationmentioning

confidence: 97%