2012
DOI: 10.1109/lpt.2011.2171679
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Transistor Laser Power Stabilization Using Direct Collector Current Feedback Control

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Cited by 14 publications
(4 citation statements)
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“…This device data was also used for the device modelling that we reported in [10], and the small-signal equivalent circuit model has been used to generate the results reported below. Given that data is also available for S 11 and S 22 , we have used (7) and (8) to extract the intrinsic voltage and current modulation responses as shown in Fig.4. In order to obtain the absolute values, we used the static light-current slope characteristic value and assumed that at the low frequency…”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…This device data was also used for the device modelling that we reported in [10], and the small-signal equivalent circuit model has been used to generate the results reported below. Given that data is also available for S 11 and S 22 , we have used (7) and (8) to extract the intrinsic voltage and current modulation responses as shown in Fig.4. In order to obtain the absolute values, we used the static light-current slope characteristic value and assumed that at the low frequency…”
Section: Discussionmentioning
confidence: 99%
“…These include potentially increased bandwidth (and resonance-free frequency response) compared to conventional laser diodes, especially under common base operation [4]; demonstration of relative intensity noise close to the shot noise limit [5]; and use of collector current feedback for reduction of third-order intermodulation distortion [6] and for optical power stabilization [7]. Moreover, the development of verticallyemitting versions of the transistor laser [8] opens up possibilities for low-cost implementations based on VCSEL technology [9].…”
Section: Introductionmentioning
confidence: 99%
“…2. Option for direct collector current feedback control, thereby eliminating the need for monitor photodiodes and simplifying power stabilization circuits [10], [11]. 3.…”
Section: Introductionmentioning
confidence: 99%
“…The transistor laser (TL) has been demonstrated with: roomtemperature continuous wave operation [14], fast spontaneous recombination lifetime (< 25ps) [15], bandfilling and voltage modulation via intracavity photon-assisted tunneling [16], [17], signal mixing via a tunnel junction [18], resonancefree high frequency operation [19], collector feedback control of laser power [20], and simultaneous 20 Gb/s electrical and optical transmission at low temperature [21]. Recently, low temperature operation of a vertical-cavity surface-emitting transistor laser (VCTL) has also been demonstrated [22].…”
Section: Introductionmentioning
confidence: 99%