“…The transistor laser (TL) has been demonstrated with: roomtemperature continuous wave operation [14], fast spontaneous recombination lifetime (< 25ps) [15], bandfilling and voltage modulation via intracavity photon-assisted tunneling [16], [17], signal mixing via a tunnel junction [18], resonancefree high frequency operation [19], collector feedback control of laser power [20], and simultaneous 20 Gb/s electrical and optical transmission at low temperature [21]. Recently, low temperature operation of a vertical-cavity surface-emitting transistor laser (VCTL) has also been demonstrated [22].…”