Transmission electron microscope study of a threading dislocation with and its effect on leakage in a 4H–SiC MOSFET

Onda, Shoichi; Watanabe, H.; Kito, Yasuo; Kondo, Hiroyuki; Uehigashi, Hideyuki; Hosokawa, Norikazu; Hisada, Yoshiaki; Shiraishi, Kenji; Saka, Hiroyasu

doi:10.1080/09500839.2013.798047

Cited by 35 publications

(33 citation statements)

References 10 publications

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“…They have also found that TDs are mixed dislocations inclined from the c-axis. 19) Such inclination of TDs has been observed by TEM and CL. Ha et al, 15) using plan-view TEM, have shown that a TED is inclined from the c-axis by approximately 15°and similarly Chung et al, 16) using cross-sectional TEM viewed along one orientation, have shown that a TED is inclined by 20°f rom the c-axis.…”

Section: Introductionmentioning

confidence: 64%

“…4,5) Although TDs in 4H-SiC have been studied by X-ray topography coupled with etchpitting [6][7][8][9][10][11][12] or cathodoluminescence (CL) method, 13,14) the poor resolution of these methods has directed attention to the application of transmission electron microscopy (TEM). [15][16][17][18][19] Onda et al 19) using TEM have shown that, in addition to a threading edge dislocation (TED) of b ¼ 1=3h11 20i, the socalled threading screw dislocations (TSDs) can be categorized into three types, the Burgers vectors of which being b = [0001], 1=3h11 23i, and h01 11i, respectively. Onda et al 14) named these TSDs a threading pure screw dislocation (TpSD), a threading near screw dislocation (TnSD) and a threading mixed dislocation (TMD).…”

Section: Introductionmentioning

confidence: 99%

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Inclination of a threading dislocation in an epilayer of 4H-SiC

Saka

Watanabe

Kitou

et al. 2014

Jpn. J. Appl. Phys.

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Threading dislocations (TDs) are inclined from the [0001] c-axis in 4H-SiC epilayers which are produced by the step-controlled technique. The reason for this inclination is discussed in the framework of isotropic elastic theory of dislocation. The elastic strain energy of a TD in an epilayer is calculated as a function of its orientation, and the minimum energy orientation is used to predict the inclination angle. The results of the calculations are as follows. For a cut-off angle (α) of 4°, a threading edge dislocation (TED) and a threading pure screw dislocation (TpSD) are inclined from the c-axis by 12 and 2°, respectively: Threading near screw dislocations (TnSDs) and threading mixed dislocations (TMDs) are inclined by angles ranging from 8 to 15°from the c-axis, depending on their actual Burgers vectors. Similarly for α of 8°, a TED and a TpSD are inclined from the caxis by 21 and 4°, respectively: TnSDs and TMDs are inclined from the c-axis by angles ranging from 7 to 17°. These predictions are in good agreement with experiment.

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Section: Introductionmentioning

confidence: 64%

Section: Introductionmentioning

confidence: 99%

Inclination of a threading dislocation in an epilayer of 4H-SiC

Saka

Watanabe

Kitou

et al. 2014

Jpn. J. Appl. Phys.

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“…Apart from the already well‐known pure threading‐screw dislocation with Bergers vector of b = ±[0001], another dislocation with Bergers vector of b = ±[0001] +1/3<

1 \bar{2} 10

> is reported , which is one dislocation generated through reaction of one threading‐screw dislocation and one threading‐edge dislocation. One more dislocation of a very large Bergers vector of b = ±[0001] +1/3<

1 \bar{1} 10

> is also reported . This dislocation can be regarded as one dislocation generated through reaction of two threading‐edge dislocations ( b = 1/3<

1 \bar{2} 10

> and b = 1/3<

2 \bar{1} \bar{1} 0

>) and one pure threading‐screw dislocations ( b = ±[0001]), and thus includes an edge dislocation element with a large Bergers vector.…”

Section: Resultsmentioning

confidence: 96%

“…It is considered that the threading dislocation, which causes leakage current at first, is the one with Bergers vector of b = ±[0001] +<

1 \bar{1} 10

> . Suppression of Al ion dosage is required for prevention of leakage current, but a trade‐off between Al ion dosage and contact resistance must be taken into account.…”

Section: Resultsmentioning

confidence: 99%

Analysis of Dislocation Structures in 4H‐SiC by Synchrotron X‐Ray Topography

Matsuhata¹,

Yamaguchi²,

Sekiguchi

et al. 2016

Electrical Engineering Japan

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SUMMARY Current 4H‐SiC wafers contain certain amount of dislocations, stacking faults, and other lattice‐defects. These defect structures evolve during various processes for power device fabrication. It is very important to examine evolutions of dislocation structures during power device processes, as well as the effect of dislocations on performances of fabricated power devices. Since lattice defects can be observed at only subsurface regions selectively by Berg–Barrett X‐ray topography, we have applied this useful observation technique to 4H‐SiC technology to solve various technological issues. Appearances of scratch‐like surface morphology after epi‐film growth on very flat substrate surface by chemomechanically polish were examined by this technique, and the mechanism was discussed. Analyses of dislocation structure evolutions during epi‐film growth and also basal‐plane dislocation glide by recombination of electrons and holes were discussed. Effects of threading‐screw dislocations on reliability of MOS structures and on current leakage in pn‐junction under reversed bias condition were investigated and discussed. Various important suggestions for 4H‐Sic industries were obtained.

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“…The physical vapor transport (PVT) method is commonly used to produce bulk single-crystalline SiC . The crystal quality of SiC grown by the PVT method has been improved to obtain micropipe-free crystals. , However, thousands of dislocations per square centimeter still exist in the crystals, which deteriorate the device performance. , …”

Section: Introductionmentioning

confidence: 99%

Analysis of the Spiral Step Structure and the Initial Solution Growth Behavior of SiC by Real-Time Observation of the Growth Interface

Kawanishi

Kamiko

Yoshikawa

et al. 2016

Crystal Growth & Design

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Microscopic real-time observation of the solution growth interface of SiC using Fe–Si solvent at 1673 K was successfully performed to understand the interface morphology at the initial stage of solution growth. The growth interface was composed of a number of domains with step–terrace structures originating from either spiral growth of 4H-SiC or two-dimensional island growth of other polytypes. The validity of the measurements of the step structures by bright-field and interference images was confirmed by ex-situ atomic force microscopy. In addition, the encounter between a spiral growth domain and steps from another spiral growth domain was observed, and it was found that a certain step height is needed to stop spiral growth by covering the spiral center.

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Transmission electron microscope study of a threading dislocation with and its effect on leakage in a 4H–SiC MOSFET

Cited by 35 publications

References 10 publications

Inclination of a threading dislocation in an epilayer of 4H-SiC

Inclination of a threading dislocation in an epilayer of 4H-SiC

Analysis of Dislocation Structures in 4H‐SiC by Synchrotron X‐Ray Topography

Analysis of the Spiral Step Structure and the Initial Solution Growth Behavior of SiC by Real-Time Observation of the Growth Interface

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