Transmission Electron Microscopy-Based Analysis of Electrically Conductive Surface Defects in Large Area GaSb Homoepitaxial Diodes Grown Using Molecular Beam Epitaxy

Romero, Orlando S.; Aragon, Andrew; Rahimi, Nassim; Shima, Darryl M.; Addamane, Sadhvikas; Rotter, T. J.; Mukherjee, S.D.; Dawson, L. R.; Lester, L. F.; Balakrishnan, Ganesh

doi:10.1007/s11664-014-3070-0

Cited by 10 publications

(1 citation statement)

References 23 publications

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“…With these bulk-limited J 02 and R Sh parameters and a J SC of 33.9 mA/cm 2 , the doublediode model predicted AM1.5g efficiency for a large-area homoepitaxial cell with current cell design and material quality to be 7.2%. A larger cell will therefore perform better; however, there were difficulties with growing large-area GaSb devices by MBE due to Ga "spitting" and low yields as discussed elsewhere, 22 although this issue could be mitigated by using a two-filament Ga effusion cell. Larger area (1.55 cm 2 ) homoepitaxial GaSb cells grown by metalorganic chemical vapor deposition (MOCVD) have reached AM1.5g efficiencies as high as 10%, and this should be a practical goal for a large-area MBE-grown cell with a thicker base and optimized grid shading.…”

Section: Gasb Solar Cells Grown On Gaas Via Interfacial Misfit Arraysmentioning

confidence: 99%

GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell

Nelson

Juang

Slocum

et al. 2017

Applied Physics Letters

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Growth of GaSb with low threading dislocation density directly on GaAs may be possible with the strategic strain relaxation of interfacial misfit arrays. This creates an opportunity for a multijunction solar cell with access to a wide range of well-developed direct bandgap materials. Multijunction cells with a single layer of GaSb/GaAs interfacial misfit arrays could achieve higher efficiency than state-of-the-art inverted metamorphic multi-junction cells while forgoing the need for costly compositionally graded buffer layers. To develop this technology, GaSb single junction cells were grown via molecular beam epitaxy on both GaSb and GaAs substrates to compare homoepitaxial and heteroepitaxial GaSb device results. The GaSb-on-GaSb cell had an AM1.5g efficiency of 5.5% and a 44-sun AM1.5d efficiency of 8.9%. The GaSb-on-GaAs cell was 1.0% efficient under AM1.5g and 4.5% at 44 suns. The lower performance of the heteroepitaxial cell was due to low minority carrier Shockley-Read-Hall lifetimes and bulk shunting caused by defects related to the mismatched growth. A physics-based device simulator was used to create an inverted triple-junction GaInP/GaAs/GaSb model. The model predicted that, with current GaSb-on-GaAs material quality, the not-current-matched, proof-of-concept cell would provide 0.5% absolute efficiency gain over a tandem GaInP/GaAs cell at 1 sun and 2.5% gain at 44 suns, indicating that the effectiveness of the GaSb junction was a function of concentration.

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Section: Gasb Solar Cells Grown On Gaas Via Interfacial Misfit Arraysmentioning

confidence: 99%

GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell

Nelson

Juang

Slocum

et al. 2017

Applied Physics Letters

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Impact of the front metal layout on the fill factor of GaSb-based photovoltaics grown on n-type substrate

Herrera

Rahinii

Conloa

et al. 2015

2015 IEEE Photonics Conference (IPC)

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Epitaxial and non-epitaxial large area GaSb-based thermophotovoltaic (TPV) cells

Rahimi

Henera

Abdallah

et al. 2015

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)

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Transmission Electron Microscopy-Based Analysis of Electrically Conductive Surface Defects in Large Area GaSb Homoepitaxial Diodes Grown Using Molecular Beam Epitaxy

Cited by 10 publications

References 23 publications

GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell

GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell

Impact of the front metal layout on the fill factor of GaSb-based photovoltaics grown on n-type substrate

Epitaxial and non-epitaxial large area GaSb-based thermophotovoltaic (TPV) cells

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