Transmission electron microscopy investigation of the structural damage formed in GaN by medium range energy rare earth ion implantation

Abstract

Articles you may be interested inA mechanism for damage formation in GaN during rare earth ion implantation at medium range energy and room temperature

The high sensitivity of InN under rare earth ion implantation at medium range energy

“…For GaN, the formation of a nanocrystalline layer from the surface occurs above 2x10 15 Eu/cm 2 , when the stacking fault network has reached the surface [10,11]. For AlN, the stacking fault network does not reach the surface and an amorphization in the bulk, around Rp, has been reported for fluences higher than 10 17 Eu/cm 2 [12].…”

“…Thus, the literature about ion implantation and correlated irradiation effects on GaN is becoming more and more complete [5][6][7]. In particular, the mechanisms of damage formation have been shown to differ from the conventional scheme of amorphization [8][9][10][11]. In the case of AlN, only a few reports are available on electronic quality layers, as was shown, this material is resistant to ion implantation damage formation and the amorphization has been shown to take place at very high implantation fluences (~10 17 at./cm 2 ) [12].…”

“…In the following, we report on the investigation of the damage formation in HVPE InN layers subsequent to Eu ion implantation at 300 keV. In contrast to GaN and AlN, where highly efficient dynamic annealing has been reported [3,5] and severe damage in form of nanocrystallization (GaN) [9][10][11] or amorphization (AlN) [12] occurs only at substantially higher fluences, it is shown that the implantation of these heavy rare earth ions, strongly damages InN at very low fluences, starting in the 10 12 at./cm 2 range.…”

Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing

“…Fig. 3c, exciting the g=1-100 reflection, shows that, in addition to the defect clusters, a complex network of basal stacking faults (BSFs), both intrinsic (I1 and I2 type) and extrinsic (E), and prismatic stacking faults (PSFs) 21,22 has been generated during the implantation. A high resolution example of one I2 BSF inside the implanted region is exhibited in Fig.…”

Implantation Damage Formation in GaN and ZnO

“…Indeed, TEM investigations for GaN Gloux et al, 2006) and ZnO (Perillat-Merceroz et al, 2011) showed the prominence of these defect types in both materials for room temperature implantations.…”