Transparent and flexible resistive switching memory devices with a very high ON/OFF ratio using gold nanoparticles embedded in a silk protein matrix

Abstract

The growing demand for biomaterials for electrical and optical devices is motivated by the need to make building blocks for the next generation of printable bio-electronic devices. In this study, transparent and flexible resistive memory devices with a very high ON/OFF ratio incorporating gold nanoparticles into the Bombyx mori silk protein fibroin biopolymer are demonstrated. The novel electronic memory effect is based on filamentary switching, which leads to the occurrence of bistable states with an ON=OFF ratio larger than six orders of magnitude. The mechanism of this process is attributed to the formation of conductive filaments through silk fibroin and gold nanoparticles in the nanocomposite. The proposed hybrid bio-inorganic devices show promise for use in future flexible and transparent nanoelectronic systems.

Effects of Electrode Materials on Charge Conduction Mechanisms of Memory Device Based on Natural Aloe Vera

“…The linear J-V relationships with slopes of close to 1 in the positive (Figure 1c,d) and negative (Figure 1e,f) regions indicate that Ohmic conduction is dominant in both ON-and OFF-state of the devices. These observations imply that the conduction mechanism is associated to the formation and rupture of a conductive filament [12][13][14][15][16][17][18][19][20] within the Aloe vera films. In contrast, the J-V characteristics of the device reported previously [11] depict three distinct regions in both positive and negative bias, which can be fitted with a combination of Ohm's and Child's law (OFF-state), and Child's law (ON-state), respectively, constituting the framework of SCLC theory.…”

“…In contrary, many reports [12][13][14][15][16][17][18][19][20] attribute the resistive switching behaviors in thin films of bio-organic materials to the formation and dissolution of a conductive filament bridging the top and bottom electrodes. The memory cells typically consist of an active (e.g.…”

Silk Fibroin for Flexible Electronic Devices

“…For instance, by incorporating gold nanoparticles (Au NPs) into the silk fi broin, a fl exible resistive-switching memory device with a higher OFF/ON ratio (>10 6 ) and a lower set/reset voltage (±2 V) was achieved. [ 170 ] The improved performance can be attributed to the formation of conductive fi laments in the switching layer through the Coulombic interaction between the positively charged silk-fi broin chain and the negatively charged Au NPs.…”

Flexible and transparent resistive switching devices using Au nanoparticles decorated reduced graphene oxide in polyvinyl alcohol matrix

“…Among above, RRAM is an attractive candidate for next generation memory due to its low operating voltage, high on/off switching ratio and high stability [6][7][8][9][10][11]. In addition to inorganic solid electrolytes, resistive switching in organic based materials has been investigated for flexible and transparent memory devices [12][13][14].…”