Transparent Conductive Oxide Sputtering Damage on Contact Passivation in Silicon Heterojunction Solar Cells with Hydrogenated Nanocrystalline Silicon

Qiu, Daohong; Duan, Weiyuan; Lambertz, Andreas; Eberst, Alexander; Bittkau, Karsten; Rau, Uwe; Ding, Kaining

doi:10.1002/solr.202200651

Cited by 11 publications

(6 citation statements)

References 51 publications

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“…13,14 In recent years, metal nanowire (NW) networks have received strong attention due to their excellent conductivity and mechanical flexibility, which broadens the range of TE applications to flexible optoelectronics. 15 A wide variety of NW network geometries have been proposed in the context of solar cell applications, which can be designed to increase device performance by making use of nanophotonic effects such as (plasmonic) light trapping 5,16,17 or spectral splitting for tandem devices. 18,19 Metal NW networks can be fabricated using solution-based processes that enable high-throughput large-scale manufacturing.…”

Section: Introductionmentioning

confidence: 99%

High Aspect Ratio Silver Nanogrids by Bottom-Up Electrochemical Growth as Transparent Electrode

Bleiji,

Cordaro,

Tabernig

et al. 2024

ACS Appl. Opt. Mater.

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A scalable selective-area electrochemical method is reported for the fabrication of interconnected metal nanostructures. In this work, the fabrication of silver nanowire grids for the application of transparent electrodes is explored. The presented method is based on a through-the-mask electrodeposition method, where the mask is made by using substrate conformal imprint lithography. We find that the nucleation density of the silver nanoparticles is the key parameter for successful homogeneous void-free filling of the template. We independently controlled the density of the silver nuclei and their growth by using a double potential pulse. The silver nanowire grids show high transmission (95.9%) and low sheet resistance (as low as 3.7 Ω/sq), resulting in a superior figure of merit (FoM). Due to the bottom-up nature of this technique, arbitrarily high aspect ratio nanowires can be achieved, therefore decreasing the sheet resistance without affecting transmittance and carrier collection. The presented method can be generalized to the large-area nanofabrication of any well-defined nanostructure design of any metal transparent electrode for multiple applications.

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Section: Introductionmentioning

confidence: 99%

High Aspect Ratio Silver Nanogrids by Bottom-Up Electrochemical Growth as Transparent Electrode

Bleiji,

Cordaro,

Tabernig

et al. 2024

ACS Appl. Opt. Mater.

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“…They can efficiently collect and transport carriers from the silicon absorbing layer. [ 5–7 ] Nevertheless, indium is a rare element on Earth and is expensive resulting in elevated large‐scale industrial production costs for SHJ solar cells, which greatly limit the widespread application of SHJ solar cells. [ 8 ] Therefore, it is necessary to introduce cheaper alternative materials to reduce dependence on indium‐based TCO while maintaining a high PCE.…”

Section: Introductionmentioning

confidence: 99%

Gallium‐Doped Zinc Oxide/Tungsten‐Doped Indium Oxide Stacks with Enhanced Lateral Transport Capability for Efficient and Low‐Cost Silicon Heterojunction Solar Cells

Yan,

Shi,

Chen

et al. 2024

Solar RRL

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To decrease the series resistance in front Gallium‐doped zinc oxide (GZO) silicon heterojunction (SHJ) solar cells caused by high‐resistivity GZO films, stack films including Tungsten‐doped indium oxide (IWO) films which have better lateral transport properties were used as the front transparent conductive oxide (TCO) to improve charge transport. The crystal structure and, electrical and optical characteristics of GZO/IWO stacks with different thickness ratios were investigated and the current‐voltage performance of SHJ solar cells with front GZO/IWO stacks and rear GZO film were analyzed. The effective transmittance of the stacks was greater 98% in the visible region. When the thickness of GZO/IWO was 50 nm:50 nm, the resistivity reached 8.59×10‐4 Ω·cm, which is a significantly 70% reduction compared with that of a single GZO film. Meanwhile, the power conversion efficiency was improved to 23.8%, effectively reducing the efficiency gap by approximately 0.12% compared to a single IWO transparent electrode. More effective lateral transport lowers the series resistance of SHJ solar cells. By employing stacks with lower indium content in the front TCO of SHJ solar cells, the cost can be reduced without significantly affecting the efficiency, which is important for the large‐scale development of SHJ solar cells.This article is protected by copyright. All rights reserved.

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“…This is surprising considering the previously reported fabrication of Si heterojunction cells incorporating a TiO x /TCO contact structure. 23,24 It is well-known that sputtering-induced damage is a common concern for Si-based passivating contacts, including a-Si:H 25,26 and poly-Si. 27 However, thermal treatment aer sputtering TCO layers is oen effective in enabling recovery and improving the passivation quality of these contacts.…”

Section: Introductionmentioning

confidence: 99%

Addressing the stability challenges of TiO_x-based passivating contacts for high-efficiency c-Si solar cells

Shehata,

Truong,

Bartholazzi

et al. 2024

J. Mater. Chem. A

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Transparent Conductive Oxide Sputtering Damage on Contact Passivation in Silicon Heterojunction Solar Cells with Hydrogenated Nanocrystalline Silicon

Abstract: The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/solr.202200651.

Cited by 11 publications

References 51 publications

High Aspect Ratio Silver Nanogrids by Bottom-Up Electrochemical Growth as Transparent Electrode

High Aspect Ratio Silver Nanogrids by Bottom-Up Electrochemical Growth as Transparent Electrode

Gallium‐Doped Zinc Oxide/Tungsten‐Doped Indium Oxide Stacks with Enhanced Lateral Transport Capability for Efficient and Low‐Cost Silicon Heterojunction Solar Cells

Addressing the stability challenges of TiO_x-based passivating contacts for high-efficiency c-Si solar cells

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Transparent Conductive Oxide Sputtering Damage on Contact Passivation in Silicon Heterojunction Solar Cells with Hydrogenated Nanocrystalline Silicon

Abstract: The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/solr.202200651.

Cited by 11 publications

References 51 publications

High Aspect Ratio Silver Nanogrids by Bottom-Up Electrochemical Growth as Transparent Electrode

High Aspect Ratio Silver Nanogrids by Bottom-Up Electrochemical Growth as Transparent Electrode

Gallium‐Doped Zinc Oxide/Tungsten‐Doped Indium Oxide Stacks with Enhanced Lateral Transport Capability for Efficient and Low‐Cost Silicon Heterojunction Solar Cells

Addressing the stability challenges of TiOx-based passivating contacts for high-efficiency c-Si solar cells

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Addressing the stability challenges of TiO_x-based passivating contacts for high-efficiency c-Si solar cells