Transparent organic thin-film transistors and nonvolatile memory devices fabricated on flexible plastic substrates

Kim, Soojin; Song, Ji-Min; Lee, Jang‐Sik

doi:10.1039/c1jm11812a

Cited by 49 publications

(32 citation statements)

References 36 publications

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“…In particular, high-performance flexible non-volatile memories based on various data storage principles such as resistive type [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24] , flash 4,[25][26][27][28][29] and ferroelectric [30][31][32][33][34][35][36][37][38][39][40] hold great promise in a variety of emerging applications ranging from mobile computing to information management and communication. While the recent advances in this area are impressive, novel organic materials and electronic device structures that can be tightly rolled, crumpled, stretched, sharply folded and unfolded repeatedly without any performance degradation still need to be developed.…”

mentioning

confidence: 99%

Non-volatile organic memory with sub-millimetre bending radius

et al. 2014

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High-performance non-volatile memory that can operate under various mechanical deformations such as bending and folding is in great demand for the future smart wearable and foldable electronics. Here we demonstrate non-volatile solution-processed ferroelectric organic field-effect transistor memories operating in p-and n-type dual mode, with excellent mechanical flexibility. Our devices contain a ferroelectric poly(vinylidene fluoride-cotrifluoroethylene) thin insulator layer and use a quinoidal oligothiophene derivative (QQT(CN)4) as organic semiconductor. Our dual-mode field-effect devices are highly reliable with data retention and endurance of 46,000 s and 100 cycles, respectively, even after 1,000 bending cycles at both extreme bending radii as low as 500 mm and with sharp folding involving inelastic deformation of the device. Nano-indentation and nano scratch studies are performed to characterize the mechanical properties of organic layers and understand the crucial role played by QQT(CN)4 on the mechanical flexibility of our devices.

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confidence: 99%

Non-volatile organic memory with sub-millimetre bending radius

et al. 2014

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“…All-organic approach limits the material choice while hybrid approach allows only low-temperature processes for flexible NVMs, consequently, operation voltages as high as ±5 V to ±90 V with a minimum channel length of 2 µm for recent flexible flash memories have been reported [28]- [30] that provides opportunities to further explore.…”

Section: B Memory Management Modulementioning

confidence: 99%

Freeform Compliant CMOS Electronic Systems for Internet of Everything Applications

Shaikh

Ghoneim

Sevilla

et al. 2017

IEEE Trans. Electron Devices

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“…High performance flexible OMDs, including organic resistors [195][196][197][198][199][200], OFET memories [16,39,[201][202][203][204][205][206][207][208] and other complex-structured memories [209,210], are vastly investigated concerning high switching speed, high on/off ratios, long retention time, and even multi-level states or multi-functionalities [211]. They show tremendous applications in sensor arrays [212][213][214], braille displays [39], integrated circuits [215] and RFIDs [48].…”

Section: Ultraflexible Organic Memory Devicesmentioning

confidence: 99%

Thin-film organic semiconductor devices: from flexibility to ultraflexibility

Qian

Zhang

et al. 2016

Sci. China Mater.

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Flexible thin-film organic semiconductor devices have received wide attention due to favorable properties such as light-weight, flexibility, reproducible semiconductor resources, easy tuning of functional properties via molecular tailoring, and low cost large-area solution-procession. Among them, ultraflexible electronics, usually with minimum bending radius of less than 1 mm, are essential for the development of epidermal and bio-implanted electronics, wearable electronics, collapsible and portable electronics, three dimensional (3D) surface compliable electronics, and bionics. This review firstly gives a brief introduction of development from flexible to ultraflexible organic semiconductor electronics, and design of ultraflexible devices, then summarizes the recent advances in ultraflexible thin-film organic semiconductor devices, focusing on organic field effect transistors, organic light-emitting diodes, organic solar cells and organic memory devices.

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Transparent organic thin-film transistors and nonvolatile memory devices fabricated on flexible plastic substrates

Cited by 49 publications

References 36 publications

Non-volatile organic memory with sub-millimetre bending radius

Non-volatile organic memory with sub-millimetre bending radius

Freeform Compliant CMOS Electronic Systems for Internet of Everything Applications

Thin-film organic semiconductor devices: from flexibility to ultraflexibility

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