Transparent p-AgCoO2/n-ZnO diode heterojunction fabricated by pulsed laser deposition

Ajimsha, R. S.; Vanaja, K.; Jayaraj, M. K.; Misra, Pankaj; Dixit, V. K.; Kukreja, L. M.

doi:10.1016/j.tsf.2007.03.002

Cited by 65 publications

(27 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is reported that the ideal value of ideality factor as 1 at low voltage and 2 at high voltage for an ideal Schottky diode [11]. In general, high value of ideality factor could be due to presence of native oxide layer, accelerated recombination of electrons and holes in depletion region, the presence of interfacial layer [12], and the presence of imperfections [13]. Luo et al have reported the value of ideality factor as 2.1 at low voltage for highly epitaxial STO film on silicon [2].…”

Section: Resultsmentioning

confidence: 99%

Fabrication and electrical characterization of Au/p-Si/STO/Au contact

Gupta

Ghosh

Kahol

2009

Current Applied Physics

View full text Add to dashboard Cite

Section: Resultsmentioning

confidence: 99%

Fabrication and electrical characterization of Au/p-Si/STO/Au contact

Gupta

Ghosh

Kahol

2009

Current Applied Physics

View full text Add to dashboard Cite

“…[6,7] Among oxide semiconductors, many show significantly high electron mobility, [8][9][10] although p-channel materials show very poor hole mobility. [10,11] Most recently, solution-processed zinc oxide FET electron mobility reached 5.25 cm 2 V À1 s À1 [12] with a high on/off ratio. This was achieved using processes and materials that differed from ours, including three high-temperature annealing steps, a proprietary sputtered mixed oxide dielectric (aluminum titanium oxide), and a less stable, more difficult to deposit source/drain metal (Zn).…”

Section: Introductionmentioning

confidence: 99%

Solution‐Deposited Zinc Oxide and Zinc Oxide/Pentacene Bilayer Transistors: High Mobility n‐Channel, Ambipolar, and Nonvolatile Devices

Pal

Trottman

Sun

et al. 2008

Adv Funct Materials

103

View full text Add to dashboard Cite

A solution processed n‐channel zinc oxide (ZnO) field effect transistor (FET) was fabricated by simple dip coating and subsequent heat treatment of a zinc acetate film. The field effect mobility of electrons depends on ZnO grain size, controlled by changing the number of coatings and zinc acetate solution concentration. The highest electron mobility achieved by this method is 7.2 cm2 V−1 s−1 with On/Off ratio of 70. This electron mobility is higher than for the most recently reported solution processed ZnO transistor. We also fabricated bilayer transistors where the first layer is ZnO, and the second layer is pentacene, a p‐channel organic which is deposited by thermal evaporation. By changing the ZnO grain size (or thickness) this type of bilayer transistor shows p‐channel, ambipolar and n‐channel behavior. For the ambipolar transistor, well balanced electron and hole mobilities are 7.6 × 10−3 and 6.3 × 10−3 cm2 V−1 s−1 respectively. When the ZnO layer is very thin, the transistor shows p‐channel behavior with very high reversible hysteresis. The nonvolatile tuning function of this transistor was investigated.

show abstract

“…10 Recently we have reported ZnO based alltransparent conducting p-n heterojunction diodes with p-type AgCoO 2 . 11,12 Although ZnO films can be grown by a variety of methods, including radiofrequency (RF) and direct-current (DC) sputtering, 3,13,14 chemical vapor deposition, 15 spray pyrolysis, 16 and electron cyclotron resonance-assisted molecular-beam epitaxy, 17 we used pulsed laser deposition (PLD) 1,18,19 to deposit high-quality ZnO films because of its effectiveness and amenability to different growth conditions. 20 For the present study we fabricated heterojunctions of n-type ZnO on p-type Si, which has many advantages such as low cost, large wafer size, and the possibility of integrating oxide semiconductors with already highly matured silicon technology.…”

Section: Introductionmentioning

confidence: 99%

Electrical Characteristics of n-ZnO/p-Si Heterojunction Diodes Grown by Pulsed Laser Deposition at Different Oxygen Pressures

Ajimsha

Jayaraj

Kukreja

2008

Journal of Elec Materi

Self Cite

View full text Add to dashboard Cite

Heterojunction diodes of n-type ZnO/p-type silicon (100) were fabricated by pulsed laser deposition of ZnO films on p-Si substrates in oxygen ambient at different pressures. These heterojunctions were found to be rectifying with a maximum forward-to-reverse current ratio of about 1,000 in the applied voltage range of -5 V to +5 V. The turn-on voltage of the heterojunctions was found to depend on the ambient oxygen pressure during the growth of the ZnO film. The current density-voltage characteristics and the variation of the series resistance of the n-ZnO/p-Si heterojunctions were found to be in line with the Anderson model and Burstein-Moss (BM) shift.

show abstract

Transparent p-AgCoO2/n-ZnO diode heterojunction fabricated by pulsed laser deposition

Cited by 65 publications

References 14 publications

Fabrication and electrical characterization of Au/p-Si/STO/Au contact

Fabrication and electrical characterization of Au/p-Si/STO/Au contact

Solution‐Deposited Zinc Oxide and Zinc Oxide/Pentacene Bilayer Transistors: High Mobility n‐Channel, Ambipolar, and Nonvolatile Devices

Electrical Characteristics of n-ZnO/p-Si Heterojunction Diodes Grown by Pulsed Laser Deposition at Different Oxygen Pressures

Contact Info

Product

Resources

About