Transparent Photo‐Stable Complementary Inverter with an Organic/Inorganic Nanohybrid Dielectric Layer

Abstract

Transparent electronics has been one of the key terminologies forecasting the ubiquitous technology era. Several researchers have thus extensively developed transparent oxide‐based thin‐film transistors (TFTs) on glass and plastic substrates. However, work in transparent electronics has been limited mostly to high‐voltage devices operating at more than a few tens of volts, and has mainly focused on transparent display drivers. Low‐voltage logic devices, such as transparent complementary inverters, operating in an electrically stable and photo‐stable manner, are now very necessary to practically realize transparent electronics. Electrically stable dielectrics with high strength and high capacitance must also be proposed to support this mission, and simultaneously these dielectrics must be compatible with both n‐ and p‐channel TFTs in device fabrication. Here, a nanohybrid dielectric layer that is composed of multiple units of inorganic oxide and organic self‐assembled monolayer is proposel to support a transparent complementary TFT inverter operating at 3 V.

Ultrasensitive PbS quantum-dot-sensitized InGaZnO hybrid photoinverter for near-infrared detection and imaging with high photogain

“…19,20 In addition, amorphous metal oxide semiconductor-based thin-film transistors (TFTs) have attracted considerable attention as an emerging technology to replace amorphous and polycrystalline Si TFTs because of their high optical transparency, amorphous microstructure, high electron mobility, low off-current level and low processing temperatures; these advantages may make large-area and low-cost microelectronic circuit systems possible. [21][22][23][24][25][26][27] Considerable effort has been devoted to optimize the fabrication process and to improve the device performance and reliability. 27 As a consequence, amorphous metal oxide semiconductor indium gallium zinc oxide (InGaZnO, IGZO) TFTs are very close to being commercialized in active matrix backplanes as a pixel driver for high-resolution liquid crystal displays and organic light-emitting diodes display.…”

Light and Temperature Stability of Fully Transparent ZnO-Based Inverter Circuits

“…The minimal value of the output voltage (0.1 V) is close to the ideal value of 0 V. Here, blue light induces an increase to about 0.15 V, whereas for red and green light, the output voltage remains nearly unchanged. Despite the photoinduced performance reduction, the parameters of the illuminated MESFET inverter circuits are still superior compared to (dark) transparent oxide-based MISFET inverter circuits [9], [13], [24]. The evolution of the VTC with increasing temperature is shown exemplarily for three temperatures in Fig.…”

Transparent photostable ZnO nonvolatile memory transistor with ferroelectric polymer and sputter-deposited oxide gate

“…[13][14][15] Transparent NVM and logic devices are very necessary if we aim at various transparent device applications. Transparent complementary inverters and NVM resistors were recently reported 16,17 but transparent NVM-TFT with good write ͑WR͒/erase ͑ER͒ capability has rarely been investigated ͑ex-cept the one with charge injection type memory, which showed a serious limit in ER͒. 18 The most challenging in the present memory TFT fabrication was how to deposit a transparent conducting gate oxide on top of the ferroelectric P͑VDF/TrFE͒ without any damage or any property change of the polymer, which might be unavoidable under plasma process.…”