Transport and Field Emission Properties of MoS2 Bilayers

Urban, Francesca; Passacantando, M.; Giubileo, Filippo; Iemmo, Laura; Bartolomeo, Antonio Di

doi:10.3390/nano8030151

Cited by 79 publications

(54 citation statements)

References 58 publications

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“…The Ti contact resistance, in particular, can be increased by the formation of TiO 2 due to oxygen diffusion under the metal leads, possibly facilitated by defects such as unreacted MoO 3 . Indeed, devices on the same chip, measured soon after fabrication, showed ohmic behavior with much lower contact resistance …”

Section: Resultsmentioning

confidence: 99%

Asymmetric Schottky Contacts in Bilayer MoS₂ Field Effect Transistors

Bartolomeo

Grillo

Urban

et al. 2018

Adv Funct Materials

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182

154

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The high-bias electrical characteristics of back-gated field-effect transistors with chemical vapor deposition synthesized bilayer MoS 2 channel and Ti Schottky contacts are discussed. It is found that oxidized Ti contacts on MoS 2 form rectifying junctions with ≈0.3 to 0.5 eV Schottky barrier height. To explain the rectifying output characteristics of the transistors, a model is proposed based on two slightly asymmetric back-to-back Schottky barriers, where the highest current arises from image force barrier lowering at the electrically forced junction, while the reverse current is due to Schottkybarrier-limited injection at the grounded junction. The device achieves a photoresponsivity greater than 2.5 A W −1 under 5 mW cm −2 white-LED light. By comparing two-and four-probe measurements, it is demonstrated that the hysteresis and persistent photoconductivity exhibited by the transistor are peculiarities of the MoS 2 channel rather than effects of the Ti/MoS 2 interface.

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Section: Resultsmentioning

confidence: 99%

Asymmetric Schottky Contacts in Bilayer MoS₂ Field Effect Transistors

Bartolomeo

Grillo

Urban

et al. 2018

Adv Funct Materials

Self Cite

182

154

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show abstract

“…The isolation of graphene [1][2][3] in 2004 and, later on, of h-BN [4], phosphorene [5], S Mo 2 [6][7][8][9][10][11][12][13][14], WSe 2 [15][16][17], e PdS 2 [18,19], PtSe 2 [20,21] etc, has strongly attracted the interest of the material science community to the world of two-dimensional (2D) materials.…”

Section: Introductionmentioning

confidence: 99%

Contact resistance and mobility in back-gate graphene transistors

et al. 2020

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The metal-graphene contact resistance is one of the major limiting factors toward the technological exploitation of graphene in electronic devices and sensors. High contact resistance can be detrimental to device performance and spoil the intrinsic great properties of graphene. In this paper, we fabricate back-gate graphene field-effect transistors with different geometries to study the contact and channel resistance as well as the carrier mobility as a function of gate voltage and temperature. We apply the transfer length method and the y-function method showing that the two approaches can complement each other to evaluate the contact resistance and prevent artifacts in the estimation of carrier mobility dependence on the gate-voltage. We find that the gate voltage modulates both the contact and the channel resistance in a similar way but does not change the carrier mobility. We also show that raising the temperature lowers the carrier mobility, has a negligible effect on the contact resistance, and can induce a transition from a semiconducting to a metallic behavior of the graphene sheet resistance, depending on the applied gate voltage. Finally, we show that eliminating the detrimental effects of the contact resistance on the transistor channel current almost doubles the carrier field-effect mobility and that a competitive contact resistance as low as 700 Ω·μm can be achieved by the zig-zag shaping of the Ni contact.

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“…Molybdenum disulfide (MoS 2 ) is one of the most studied members of the transition metal dichalcogenide family [1,2] as an alternative to graphene [3,4] for new-generation electronic devices and sensors based on atomically thin 2D materials. It has been extensively used to develop field effect transistors (FETs) [5,6], photodetectors [7], photovoltaic cells [8], light emitters [9], integrated circuits [10], field emission devices [11,12], and chemical [13] or biological [14] sensors.…”

Section: Introductionmentioning

confidence: 99%

Nanotip Contacts for Electric Transport and Field Emission Characterization of Ultrathin MoS2 Flakes

et al. 2020

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We report a facile approach based on piezoelectric-driven nanotips inside a scanning electron microscope to contact and electrically characterize ultrathin MoS2 (molybdenum disulfide) flakes on a SiO2/Si (silicon dioxide/silicon) substrate. We apply such a method to analyze the electric transport and field emission properties of chemical vapor deposition-synthesized monolayer MoS2, used as the channel of back-gate field effect transistors. We study the effects of the gate-voltage range and sweeping time on the channel current and on its hysteretic behavior. We observe that the conduction of the MoS2 channel is affected by trap states. Moreover, we report a gate-controlled field emission current from the edge part of the MoS2 flake, evidencing a field enhancement factor of approximately 200 and a turn-on field of approximately 40 V / μ m at a cathode–anode separation distance of 900 nm .

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Transport and Field Emission Properties of MoS2 Bilayers

Cited by 79 publications

References 58 publications

Asymmetric Schottky Contacts in Bilayer MoS₂ Field Effect Transistors

Asymmetric Schottky Contacts in Bilayer MoS₂ Field Effect Transistors

Contact resistance and mobility in back-gate graphene transistors

Nanotip Contacts for Electric Transport and Field Emission Characterization of Ultrathin MoS2 Flakes

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Transport and Field Emission Properties of MoS2 Bilayers

Cited by 79 publications

References 58 publications

Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors

Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors

Contact resistance and mobility in back-gate graphene transistors

Nanotip Contacts for Electric Transport and Field Emission Characterization of Ultrathin MoS2 Flakes

Contact Info

Product

Resources

About

Asymmetric Schottky Contacts in Bilayer MoS₂ Field Effect Transistors

Asymmetric Schottky Contacts in Bilayer MoS₂ Field Effect Transistors