Transport and noise in GaAs/AlGaAs heterojunction bipolar transistors. II. Noise and gain at low frequencies

Jue, S.C.; Day, D. J.; Margittai, A.; Svilans, M.

doi:10.1109/16.24343

Cited by 18 publications

(3 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In Fig. 4 of [25] Hayama et al [26] fabricated a low-phase noise Ku-band oscillator using an HBT with a measured collector current l/f noise of about 6 x A2/Hz, at f = 1 Hz and 1 , = 1.2 mA. This experimental result is plotted in Fig.…”

Section: Heterojunction Bipolar Transistors (Hbt's)mentioning

confidence: 90%

“…6: 0, A. 0 [7], and for comparison, SI^ versus I B as measured by Tutt et al [23] (m) and [24] (+), by Jue et al [25] According to (12) and (1 3) this ratio has to be B2 N 70. 3) At higher base currents (> 1 mA) the GR noise disappears.…”

Section: Heterojunction Bipolar Transistors (Hbt's)mentioning

confidence: 99%

“…Jue et al [25] investigated the LF noise in GaAs/AlGaAs HBT's. Generally, the LF noise under low-bias conditions was found to be l/f in nature.…”

Section: Heterojunction Bipolar Transistors (Hbt's)mentioning

confidence: 99%

See 2 more Smart Citations

Low-frequency noise in modern bipolar transistors: impact of intrinsic transistor and parasitic series resistances

Kleinpenning

1994

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

Abstract-In modern submicrometer transistors, the influence of the internal base and emitter series resistances, on both the I-V characteristics and the LF noise at higher bias currents, becomes important. In this paper expressions are presented for the LF noise in transistors, where the influence of the series resistances has been taken into account. The expressions have been compared with recent experimental results from the literature obtained from modern submicrometer (heterojunction) bipolar transistors. At low forward currents the LF noise in such transistors is determined by spontaneous fluctuations in the base and collector currents. In most transistors at higher forward currents, the parasitic series resistances and their noise become important.

show abstract

Section: Heterojunction Bipolar Transistors (Hbt's)mentioning

confidence: 90%

Section: Heterojunction Bipolar Transistors (Hbt's)mentioning

confidence: 99%