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Experiments are described in which zinc and cadmium diffuse together in InP and interact. When zinc is diffused into cadmium-doped InP, it is found that (1) the presence of cadmium increases the penetration depth of the zinc and (2) the presence of the diffusing zinc greatly increases the rate of out-diffusion of cadmium from the semiconductor. A model is proposed to explain this behaviour. It is suggested that both elements diffuse by a substitutional-interstitial mechanism and that the interaction between them is a consequence of both influencing the local concentration of holes. Simulations made using the model show good agreement with experiment.

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