Transport characteristics of Pd Schottky barrier diodes on epitaxial n-GaSb as determined from temperature dependent current–voltage measurements

Abstract

Highlights Transport characteristics of Pd/epitaxial n-GaSb:Te SBDs are studied by means of I-V-T measurements.  SBDs have remarkably low and saturating reverse current -of the lowest ever reported for GaSb.  Transport behaviour is explained by considering electronic states present on the GaSb surface. Evidence is presented for barrier inhomogeneity across the metal-semiconductor contact. Abstract:The temperature dependent transport characteristics of Pd/n-GaSb:Te (

Extraction of the electrical parameters of the Au/InSb/InP Schottky diode in the temperature range (300 K- 425 K)

“…Recently, (III-V) semiconductors have received a great deal of attention for the fabrication of microwave devices as well as integrated circuits used in modern high-speed optical communication systems [1][2][3][4]. Among the most widely used III-V compounds are GaN, GaAs, GaP, and InP, because of their band gap to their wide band gaps, stability at high temperatures, electron mobility, hardness, low iconicity and high terminal conductivity [4][5][6][7][8]. InP binary compound belongs to a family of III-V semiconductors which is widely used in the manufacture of electronic components such as Schottky diode (MS), metal-isolate-semiconductor (MIS) structure, MOS, transistor,….etc [9][10][11][12].…”

A Forward Current-Voltage-Temperature Method for Extraction of Intrinsic Schottky Barrier Height

“…As one can see in references, the values of j increase with increasing temperature, 9-14 however, as the temperature increases, the barrier height of GaAs/Cr and Pd/n-GaSb starts to decrease. 15,16 A very important point is that these authors seem to misinterpret the Richardson-Dushman's formula, the current is thermionic current, I tc , in R-D's law. The intrinsic Schottky barrier height should be obtained by the least square non-linear curve-fitting on the experimental graph of I tc -T. Besides, barrier height dependent on the temperature is not considered from the experimental I-V curve, neither of the possible conduction mechanisms at low and high temperatures.…”