Transport properties and the semiconducting nature of TiS2

Logothetis, E. M.; Kaiser, William J.; Kukkonen, Carl A.; Faile, S. P.; Colella, R.; Gambold, J.

doi:10.1016/0378-4363(80)90231-4

Cited by 29 publications

(14 citation statements)

References 16 publications

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“…Fig. 1 according to (6) and (8) For three samples, we have evaluated the concentrations of [Ti4+] and [Ti3+] using (6) and (8) as a function of temperature, as shown in Fig. 6.…”

Section: (7)mentioning

confidence: 99%

Localized Impurity Level and Carrier Concentration in Self‐Intercalated TiS₂ Crystals

Inoue

Koyano

Negishi

et al. 1985

Physica Status Solidi (b)

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The a-and c-axis resistivities and Hall coefficients of self-intercalated IT-CdI, type layered crystals of TiS, are measured over the temperature range 1.5 to 300 K. The temperature dependence of the carrier concentration a t low temperatures T < 150 K c m be explained by a simple model which takes into account both, the host Ti 3d conduction band and a localized impurity level Ei due to excess Ti atom. The position of Ei is found to lie by about 5 meV above the Fermi energy. The self-intercalated Ti atoms become ionized impurity scattering centers as Ti4f and Ti3f ions, whose relaxation times are calculated to give a good fit to the observed residual resistivity vs. carrier concentration curve.

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“…Fig. 1 according to (6) and (8) For three samples, we have evaluated the concentrations of [Ti4+] and [Ti3+] using (6) and (8) as a function of temperature, as shown in Fig. 6.…”

Section: (7)mentioning

confidence: 99%

Localized Impurity Level and Carrier Concentration in Self‐Intercalated TiS₂ Crystals

Inoue

Koyano

Negishi

et al. 1985

Physica Status Solidi (b)

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“…It is built up by S-Ti-S layers which are stacked on top of each other and separated by a van der Waals' gap. Since the 1970s, the existence of stoichiometric TiS 2 is controversial although it is agreed that TiS 2 has either semimetal or semiconductor behavior [11][12][13][14][15][16][17][18]. In fact, it is well known that TiS 2 tends to grow metal rich and that the excess Ti atoms intercalate into the van der Waals' gap, leading to Ti 1+x S 2 .…”

Section: Introductionmentioning

confidence: 99%

Electron doping and phonon scattering in Ti 1+ x S 2 thermoelectric compounds

et al. 2014

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Bulk polycrystalline samples in the series Ti 1+x S 2 (x = 0 to 0.05) were prepared using high temperature synthesis from the elements and spark plasma sintering. X-ray structure analysis shows that the lattice constant c expands as titanium intercalates between TiS 2 slabs. For x=0, a Seebeck coefficient close to -300 µV/K is observed for the first time in TiS 2 compounds. The decrease in electrical resistivity and Seebeck coefficient that occurs upon Ti intercalation (Ti off stoichiometry) supports the view that charge carrier transfer to the Ti 3d band takes place and the carrier concentration increases. At the same time, the thermal conductivity is reduced by phonon scattering due to structural disorder induced by Ti intercalation. Optimum ZT values of 0.14 and 0.48 at 300K and 700K, respectively, are obtained for x=0.025.

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“…The solid line in ( a ) represents the values calculated using Equation (4) with m * / m 0 ( m 0 is the free electron mass) equal to 2.88 when n is greater than 5 × 10 20 cm − 3 [74,75,76]. …”

Section: Tis2-based Layered Sulfidesmentioning

confidence: 99%

“…Figure 6 shows the room-temperature S , ρ, and S 2 /ρ plotted against n . The solid line in Figure 6 a represents the values calculated using Equation (4) with m * / m 0 ( m 0 is the free electron mass) equal to 2.88 when n is greater than 5 × 10 20 cm − 3 [ 74 , 75 , 76 ]. The measured values fall on this calculated line.…”

Section: Tis 2 -Based Layered Sulfidesmentioning

confidence: 99%

“… ( a ) Seebeck coefficient ( S ); ( b ) electrical resistivity (ρ); and ( c ) power factor ( S 2 /ρ) plotted against the carrier concentration ( n ) at 300 K in the in-plane ( ab -plane) direction for Ti 1+ x S 2 [ 29 , 30 , 41 , 43 , 44 , 75 , 76 , 77 ]. The solid line in ( a ) represents the values calculated using Equation (4) with m * / m 0 ( m 0 is the free electron mass) equal to 2.88 when n is greater than 5 × 10 20 cm − 3 [ 74 , 75 , 76 ]. …”

Section: Tis 2 -Based Layered Sulfidesmentioning

confidence: 99%

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Hierarchical Architecturing for Layered Thermoelectric Sulfides and Chalcogenides

Jood

Ohta

2015

Materials

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Sulfides are promising candidates for environment-friendly and cost-effective thermoelectric materials. In this article, we review the recent progress in all-length-scale hierarchical architecturing for sulfides and chalcogenides, highlighting the key strategies used to enhance their thermoelectric performance. We primarily focus on TiS2-based layered sulfides, misfit layered sulfides, homologous chalcogenides, accordion-like layered Sn chalcogenides, and thermoelectric minerals. CS2 sulfurization is an appropriate method for preparing sulfide thermoelectric materials. At the atomic scale, the intercalation of guest atoms/layers into host crystal layers, crystal-structural evolution enabled by the homologous series, and low-energy atomic vibration effectively scatter phonons, resulting in a reduced lattice thermal conductivity. At the nanoscale, stacking faults further reduce the lattice thermal conductivity. At the microscale, the highly oriented microtexture allows high carrier mobility in the in-plane direction, leading to a high thermoelectric power factor.

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Transport properties and the semiconducting nature of TiS2

Cited by 29 publications

References 16 publications

Localized Impurity Level and Carrier Concentration in Self‐Intercalated TiS₂ Crystals

Localized Impurity Level and Carrier Concentration in Self‐Intercalated TiS₂ Crystals

Electron doping and phonon scattering in Ti 1+ x S 2 thermoelectric compounds

Hierarchical Architecturing for Layered Thermoelectric Sulfides and Chalcogenides

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Transport properties and the semiconducting nature of TiS2

Cited by 29 publications

References 16 publications

Localized Impurity Level and Carrier Concentration in Self‐Intercalated TiS2 Crystals

Localized Impurity Level and Carrier Concentration in Self‐Intercalated TiS2 Crystals

Electron doping and phonon scattering in Ti 1+ x S 2 thermoelectric compounds

Hierarchical Architecturing for Layered Thermoelectric Sulfides and Chalcogenides

Contact Info

Product

Resources

About

Localized Impurity Level and Carrier Concentration in Self‐Intercalated TiS₂ Crystals

Localized Impurity Level and Carrier Concentration in Self‐Intercalated TiS₂ Crystals